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Three-polycrystalline SiGe HBT (Heterojunction Bipolar Transistor)-based hybrid crystal face strain BiCOMS integrated device and preparation method thereof

A technology of mixed crystal planes and integrated devices, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as confinement and low carrier material mobility of Si materials

Inactive Publication Date: 2012-10-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Due to the low mobility of Si materials, the performance of integrated circuits manufactured by Si BiCMOS technology, especially the frequency performance, is greatly limited; for SiGe BiCMOS technology, although SiGe HBT is used for bipolar transistors, However, Si CMOS is still used for unipolar devices that restrict the improvement of the frequency characteristics of BiCMOS integrated circuits, so these limit the further improvement of the performance of BiCMOS integrated circuits

Method used

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  • Three-polycrystalline SiGe HBT (Heterojunction Bipolar Transistor)-based hybrid crystal face strain BiCOMS integrated device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0134] Embodiment 1: Preparation of 22nm mixed crystal plane BiCMOS integrated device and circuit based on three-polycrystalline SiGe HBT, the specific steps are as follows:

[0135] Step 1, SOI substrate material preparation.

[0136] (1a) Select the N-type doping concentration as 1×10 15 cm -3 The Si wafer with a crystal plane of (100) is oxidized on the surface, and the thickness of the oxide layer is 0.5 μm, which is used as the upper substrate material, and hydrogen is injected into the substrate material;

[0137] (1b) Select the N-type doping concentration as 1×10 15 cm -3 The Si sheet with a crystal plane of (110) is oxidized on its surface, and the thickness of the oxide layer is 0.5 μm, which is used as the base material of the lower layer;

[0138] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0139] (1d) Put the oxide layer on the surface o...

Embodiment 2

[0208] Embodiment 2: Preparation of 30nm mixed crystal plane strained BiCMOS integrated device and circuit based on three-polycrystalline SiGe HBT, the specific steps are as follows:

[0209] Step 1, SOI substrate material preparation.

[0210] (1a) Select the N-type doping concentration as 3×10 15 cm -3 The Si sheet with a crystal plane of (100) is oxidized on the surface, and the thickness of the oxide layer is 0.75 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0211] (1b) Select the N-type doping concentration as 3×10 15 cm -3 The Si sheet with a crystal plane of (110) is oxidized on the surface, and the thickness of the oxide layer is 0.75 μm, which is used as the base material of the lower layer;

[0212] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0213] (1d) Put the oxide layer on...

Embodiment 3

[0282] Embodiment 3: Preparation of 45nm mixed crystal plane strained BiCMOS integrated device and circuit based on three-polycrystalline SiGe HBT, the specific steps are as follows:

[0283] Step 1, SOI substrate material preparation.

[0284] (1a) Select the N-type doping concentration as 5×10 15 cm -3 Si wafers with a crystal plane of (100) are oxidized on the surface, and the thickness of the oxide layer is 1 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0285] (1b) Select the N-type doping concentration as 5×10 15 cm -3 The Si wafer, the crystal plane is (110), the surface is oxidized, and the thickness of the oxide layer is 1 μm, which is used as the base material of the lower active layer;

[0286] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0287] (1d) Put the oxide layer on the ...

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Abstract

The invention discloses a three-polycrystalline SiGe HBT (Heterojunction Bipolar Transistor)-based hybrid crystal face strain BiCOMS integrated device and a preparation method thereof. The preparation method comprises the steps of: preparing an SOI (Silicon On Insulator) substrate, wherein an upper-layer matrix material is a crystal face (100) and a lower-layer matrix material is a crystal face (110); etching a bipolar device active region, growing an N type Si epitaxial layer, preparing a collector region, and preparing a base region and an emitter region to form a SiGe HBT device; etching an NMOS (N-channel Metal Oxide Semiconductor) device region to form a deep channel, and growing the active region of an NMOS device with the crystal face (100) selectively to prepare a strain Si channel NMOS device; and growing a SiGe epitaxial layer selectively along the crystal face (110) on a PMOS (P-channel Metal Oxide Semiconductor) device region, and preparing a compressive strain SiGe channel PMOS device on the SiGe epitaxial layer; and forming the three-polycrystalline SiGe HBT-based hybrid crystal face strain BiCOMS integrated device and a circuit. According to the invention, by using the characteristics that a mobility of a strain Si material is higher than that of a body Si material and the migration is anisotropic, the three-polycrystalline SiGe HBT-based hybrid crystal face strain BiCOMS integrated circuit with enhanced property is prepared on the basis of the SOI substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a mixed crystal plane strain BiCMOS integrated device and a preparation method based on a three-polycrystalline SiGe HBT. Background technique [0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics, which was born based on this invention, has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time changing the way of thinking of human beings. It not only provides humans with a powerful tool to transform nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry, and people's huge demand for the electronics industry has prompted the rapid development of this field. In the past few ...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L21/84
Inventor 张鹤鸣李妤晨胡辉勇宋建军王海栋宣荣喜舒斌郝跃
Owner XIDIAN UNIV
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