Metal substrate vertical GaN-based LED (Light-Emitting Diode) chip and manufacturing method thereof
A technology for LED chips and metal substrates, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as high deposition temperature, high preparation cost, and difficulty in growing high indium components
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specific Embodiment approach
[0073] The second specific implementation mode, as attached figure 1 shown.
[0074] A vertical GaN-based LED chip, including an aluminum substrate (1) with a thickness of 0.5mm, and on one side of the metal aluminum substrate (1), Al x Ga y In 1-x-yN buffer layer (2), undoped Al x Ga y In 1-x-y N layer (3), n-type doped Al x Ga y In 1-x-y N layer (4), In x Ga 1-x N / GaN multiple quantum well MQW layer (5), p-type doped Al x Ga 1-x N layer (6), p-type doped Al x Ga y In 1-x-y N layer(7), n + heavily doped Al x Ga y In 1-x-y N layer (8), indium tin oxide ITO layer (9); Ni / Au electrode layer (10) is arranged on the surface of indium tin oxide ITO layer (9).
[0075] Specific Embodiment 2 The LED chip is prepared using the process steps of Specific Embodiment 1; the chip size is 300 μm×300 μm, when the applied voltage is 3.2V, its luminous wavelength is 515nm, and its brightness is 200mcd. Aluminum substrate vertical GaN-based LED green chip.
[0076] By chang...
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