Low-temperature polycrystalline silicon thin film and production method thereof

Abstract

The invention provides low-temperature polycrystalline silicon thin film and a production method thereof. The production method is used for producing low-temperature polycrystalline silicon thin film low in surface roughness, large in crystalline grain size and uniform in crystalline grain distribution and includes forming a buffer layer on a substrate, forming a seed crystal layer with crystal nucleus uniformly distributed on the buffer layer by means of the pattern forming technology; forming a non-crystalline-silicon layer on the seed crystal layer; and subjecting the non-crystalline-silicon layer to excimer laser annealing. The crystalline grains of the low-temperature polycrystalline silicon thin film produced by the production method are large in size and uniform in distribution, and further, the low-temperature polycrystalline silicon thin film is quite low in surface roughness, and accordingly solves the problems of low migration rate, high leakage current of thin-film transistors and unevenness of the migration rate and threshold voltage when being applied to a back plate of a low-temperature polycrystalline silicon display screen.

Description

technical field [0001] The invention relates to the technical field of low-temperature polysilicon thin films, in particular to a method for manufacturing a low-temperature polysilicon thin film and the low-temperature polysilicon thin film. Background technique [0002] With the advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin, AMOLED has become the best choice for future display technology. In the current AMOLED backplane technology, the technology for making polysilicon layer includes excimer laser annealing (ELA), solid phase crystallization (SPC), metal induced crystallization (MIC) and other manufacturing methods. However, using the excimer laser annealing (ELA) process to obtain the polysilicon thin film of the active layer of the transistor in the backplane is the only method that has achieved mass production. [0003] Excimer laser annealing process is a relatively compl...

AI Technical Summary

Problems solved by technology

At present, due to the inhomogeneity of polysilicon grains and the very large film roughness caused by the ordinary laser annealing process (in general, the local film roughness can reach half or more of the total thickness of the film), and the polysilicon film’s Small grain size, uneven distribution

Images