Method for preparing organic field effect transistor structure

A transistor and organic field technology, applied in the field of organic electronics, can solve the problems of complex process and mutual interference of modifiers, and achieve the effect of improving growth quality, mobility and injection efficiency

Inactive Publication Date: 2012-09-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method of sequential and independent modification is more complicated, and different modifiers will interfere with each other.

Method used

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  • Method for preparing organic field effect transistor structure
  • Method for preparing organic field effect transistor structure
  • Method for preparing organic field effect transistor structure

Examples

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preparation example Construction

[0032] Figure 1-1 to Figure 1-5 The flow chart of the method for preparing the organic field effect transistor structure provided by the present invention mainly includes the following steps:

[0033] like Picture 1-1 As shown, the patterned gate electrode 102 is prepared on the insulating substrate 101, and the thin film deposition method of the gate electrode layer includes vacuum thermal physical deposition, electron beam deposition, ion-assisted deposition, sputtering, ink jet printing, and spin coating. The insulating substrate 101 is the supporting part of the electrode, the gate dielectric and the organic semiconductor thin film layer, and the substrate should have a relatively low surface roughness and a certain ability of water vapor and oxygen permeation. Including silicon wafers with insulating films such as silicon oxide and silicon nitride, insulating glass and insulating plastic films. Materials of the gate electrode 102 thin film include gold, aluminum, plati...

Embodiment 1

[0039] The specific preparation method of the organic field effect transistor provided by this embodiment is as follows:

[0040] Step 1: On the silicon wafer substrate with 300nm silicon oxide, the photoresist pattern of the gate electrode is first prepared by photolithography process, and then a layer of 100nm thick aluminum metal film is deposited by electron beam evaporation. Photoresist and metal films are required to form patterned aluminum metal gate electrodes.

[0041] In step 2, an aluminum oxide film with a thickness of 30 nm is prepared on the aluminum metal gate electrode by atomic layer deposition technology as a gate dielectric.

[0042] Step 3: On the surface of the first type of gate dielectric layer, the photoresist pattern of the source and drain electrodes is first prepared by a photolithography process, and then a 50nm thick gold metal film is deposited by electron beam evaporation, and the unwanted light is removed by a lift-off process. Resist and metal...

Embodiment 2

[0046] The specific preparation method of the organic field effect transistor provided by this embodiment is as follows:

[0047] Step 1, on a flexible polyethylene naphthalate (PEN) film substrate, a photoresist pattern of the gate electrode is first prepared by a photolithography process, and then a layer of 100 nm thick aluminum metal film is deposited by electron beam evaporation, Unwanted photoresist and metal film are removed by a metal lift-off process to form a patterned aluminum metal gate electrode.

[0048] In step 2, an aluminum oxide film with a thickness of 30 nm is prepared on the aluminum metal gate electrode by atomic layer deposition technology as a gate dielectric.

[0049] Step 3: On the surface of the first type of gate dielectric layer, the photoresist pattern of the source and drain electrodes is first prepared by a photolithography process, and then a 50nm thick gold metal film is deposited by electron beam evaporation, and the unwanted light is removed...

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Abstract

The invention discloses a method for preparing an organic field effect transistor structure. The method includes preparing a graphical gate electrode layer on an insulating substrate; depositing a gate dielectric layer on the gate electrode layer; preparing graphical source and drain metal electrodes on the surface of the gate dielectric layer; soaking samples with the prepared graphical source and drain metal electrodes into surface modification liquor to modify surfaces of the samples; and depositing organic semiconductor films on the modified surfaces of the samples to complete preparation of a device. The films with monomolecular layers can grow on surfaces of the metal electrodes and the surface of the gate dielectric layer simultaneously in a self-organized manner, a contact interface and a groove interface of the device are improved, and the device with a high mobility ratio is prepared.

Description

technical field [0001] The invention relates to the technical field of organic electronics, in particular to a method for preparing an organic field effect transistor structure. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, there is an increasing demand for low-cost, flexible, low-weight, and portable electronic products. Traditional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements, so organic microelectronics technology based on organic polymer semiconductor materials that can achieve these properties has received more and more attention under this trend. [0003] As the basic components of organic circuits, organic field effect transistors play a decisive role in the performance of the circuit. Among them, the mobility determines the speed of the device's operation, which in turn affects t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
Inventor 商立伟姬濯宇刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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