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Method for preparing organic field effect transistor structure

A technology of transistors and organic fields, applied in the field of organic electronics, can solve problems such as complex processes and mutual interference of modifiers, and achieve the effects of improving growth quality, mobility and injection efficiency

Inactive Publication Date: 2012-09-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method of sequential and independent modification is more complicated, and different modifiers will interfere with each other.

Method used

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  • Method for preparing organic field effect transistor structure
  • Method for preparing organic field effect transistor structure
  • Method for preparing organic field effect transistor structure

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preparation example Construction

[0032] Figure 1-1 to Figure 1-5 A flow chart of the method for preparing an organic field effect transistor structure provided by the present invention, the method mainly includes the following steps:

[0033] Such as Picture 1-1 As shown, a patterned gate electrode 102 is prepared on an insulating substrate 101, and the film deposition methods of the gate electrode layer include vacuum thermophysical deposition, electron beam deposition, ion-assisted deposition, sputtering, inkjet printing, and spin coating. Wherein the insulating substrate 101 is the supporting part of the electrode, the gate dielectric and the organic semiconductor thin film layer, and the substrate should have a relatively low surface roughness, and a certain ability of waterproofing and oxygen penetration. Including silicon wafers with insulating films such as silicon oxide and silicon nitride, insulating glass and insulating plastic films. The material of the thin film of the gate electrode 102 includ...

Embodiment

[0039] The specific preparation method of the organic field effect transistor provided by this embodiment is as follows:

[0040] Step 1, on the silicon wafer substrate with 300nm silicon oxide, first prepare the photoresist pattern of the gate electrode by photolithography process, and then deposit a layer of 100nm thick aluminum metal film by electron beam evaporation, and remove the undesired metal film by metal lift-off process. Photoresist and metal film are required to form a patterned aluminum metal gate electrode.

[0041] In step 2, a 30nm-thick aluminum oxide film is prepared as a gate dielectric on the aluminum metal gate electrode by atomic layer deposition technology.

[0042] Step 3, on the surface of the first type of gate dielectric layer, first prepare the photoresist pattern of the source and drain electrodes by photolithography, and then deposit a 50nm thick gold metal film by electron beam evaporation, and remove the unnecessary light through the stripping ...

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Abstract

The invention discloses a method for preparing an organic field effect transistor structure. The method comprises the following steps of: preparing a graphical gate electrode layer on an insulating substrate; depositing a gate dielectric layer on the gate electrode layer; preparing graphical drain and source metal electrodes on the surface of the gate dielectric layer; soaking a sample prepared with the graphical drain and source metal electrodes in surface finishing solution, and carrying out finishing on the surface of the sample; and depositing an organic semiconductor film on the surface of the finished sample, and finishing preparation of a device. The method disclosed by the invention has the advantages that the contact interfaces among the organic semiconductor and the source and drain electrodes and a channel interface between the organic semiconductor and a gate dielectric are improved, the growth quality of the semiconductor film on the surface of the gate dielectric and the surfaces of the electrodes is improved, an ordered and uniform large-grained film is obtained, and further the migration rate and the injection efficiency of the device are further increased.

Description

technical field [0001] The invention relates to the technical field of organic electronics, in particular to a method for preparing an organic field effect transistor structure. Background technique [0002] With the deepening of information technology, electronic products have entered every aspect of people's life and work. In daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing. Traditional devices and circuits based on inorganic semiconductor materials are difficult to meet these requirements, so organic microelectronics technology based on organic polymer semiconductor materials that can achieve these characteristics has attracted more and more attention under this trend. [0003] Organic field effect transistors are the basic components of organic circuits, and their performance plays a decisive role in the performance of the circuit. Among them, the mobility determines the speed of the device's operation, whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
Inventor 商立伟姬濯宇刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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