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High-purity chalcogenide phase change alloy target and preparation method for same

A phase change alloy, high-purity sulfur technology, applied in electrical components and other directions, can solve the problems of difficult to control target deviation and distribution uniformity, unfavorable large-scale production, complex operation process, etc., to reduce target costs and equipment. requirements, the effect of short process flow

Active Publication Date: 2012-08-15
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that it requires annealing at different temperatures to eliminate internal stress, which makes the operation process complicated, the production cycle is long, and the preparation cost is high, and the production efficiency is low. Since the preparation process needs to be crushed and powdered, it is difficult to control the composition of each component of the target. Deviation and distribution uniformity, if the sintering temperature is too high, it will make a part of the germanium antimony tellurium phase change alloy target phase separation, which is not conducive to large-scale production

Method used

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  • High-purity chalcogenide phase change alloy target and preparation method for same
  • High-purity chalcogenide phase change alloy target and preparation method for same
  • High-purity chalcogenide phase change alloy target and preparation method for same

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Embodiment 1

[0027] The present invention is a high-purity chalcogenide phase-change alloy target, a high-purity chalcogenide phase-change alloy target, mainly composed of the following components and their weight percentages: germanium Ge 0-20%; antimony Sb 20-40% %; Tellurium Te 50-70%, the sum of the weight percentages of the mixture composed of the above raw materials is 100%, and then add 0.1wt% magnesium strips to the mixture (the mass of magnesium strips is 0.1% of the mass of the mixture) and 300ppm TeCl 4 . (TeCl 4 The concentration in the mixture is 300ppm), the specific preparation process is as follows:

[0028] 1. Ingredients

[0029] Mix target raw materials germanium Ge, antimony Sb and tellurium Te with a purity of 99.99% according to the following weight percentages: germanium 0-20%; antimony 20-40%; tellurium 50-70%, and the weight of the mixture obtained after mixing The sum of the percentages is 100%, then add magnesium strips and TeCl to the mixture 4 , wherein th...

Embodiment 2

[0039] A high-purity chalcogenide phase-change alloy target is the same as in Example 1, the difference is that the raw materials of the target are formulated according to the following specific proportions, the weight percentage of Ge is 14.14%, the weight percentage of Sb is 23.72%, Te The weight percentage is 62.14%, the sum of the weight percentages of each raw material is 100%, and the atomic ratio Ge:Sb:Te=2:2:5.

[0040] The temperature of the hot end of the double-pipe distillation furnace 4 is controlled at 650°C, and the temperature at the cold end is controlled at 20°C; the temperature of the swing furnace is slowly raised to 850°C, and the swing is melted for 25 hours, taken out and cooled, and kept in an annealing furnace at 100°C for 12 hours. Slowly cool down to room temperature to obtain alloy target samples;

[0041] Tested by X-ray Energy Spectroscopy (EDS), Ge 2 Sb 2 Te 5 The composition of the alloy target is (weight ratio) Ge: 13.66%, Sb: 24.18%, Te: 62...

Embodiment 3

[0043] A high-purity chalcogenide phase-change alloy target is basically the same as in Example 1, the difference is that the raw materials of the target are formulated according to the following proportions: Ge is 8.78% by weight, Sb is 29.46% by weight, Te The weight percentage of each raw material is 61.76%, the sum of the weight percentages of each raw material is 100%, and the atomic ratio Ge:Sb:Te=1:2:4.

[0044] The temperature of the hot end of the double-pipe distillation furnace 4 is controlled at 650°C, and the temperature at the cold end is controlled at 100°C; the temperature of the swing furnace is slowly raised to 900°C, and the swing is melted for 30 hours, taken out and cooled, and kept in an annealing furnace at 150°C for 12 hours. Slowly cool down to room temperature to obtain alloy target samples.

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Abstract

The invention discloses a high-purity chalcogenide phase change alloy target and a preparation method for the same. The high-purity chalcogenide phase change alloy target is characterized by mainly comprising, by weight, 0-20% of germanium, 20-40% of antimony and 50-70% of tellurium, the weight number sum of a mixture consisting of various raw materials is 100%, and 0.1wt% of magnesium rods and 300ppm of TeCl4 are added into the mixture. The preparation method includes: proportionally mixing the raw materials for the target respectively with the purity of 99.99%, and adding the magnesium rods and the TeCl4; filling the mixture into an H-shaped double-barreled quartz ampoule, and sealing after vacuum is controlled; placing the double-barreled quartz ampoule into a double-barreled distilling furnace for distillation and purification; and finally, placing a quartz tube containing purified simple substance germanium, simple substance antimony and simple substance tellurium into a rocking furnace, and founding and annealing so as to obtain the product. The high-purity chalcogenide phase change alloy target is even in components and high in purity, and the method is simple in operation process, non-corrosive, short in processing cycle and high in efficiency.

Description

technical field [0001] The invention relates to a phase-change storage material in the technical field of microelectronics, in particular to a high-purity chalcogenide phase-change alloy target material and a preparation method thereof. Background technique [0002] Phase change memory (PCM for short) uses the huge conductivity difference between the crystalline and amorphous states of chalcogenides to store data. High reflectivity) and the amorphous state (high resistance / low reflectivity) are reciprocally converted to realize the writing and erasing of information, and the reading of information depends on measuring the resistance or reflectivity between the crystalline state and the amorphous state achieved due to its combination of non-volatility and long cycle life (>10 13 times), small component size, low power consumption, multi-level storage, high-speed reading, radiation resistance, high and low temperature resistance (-55 ~ 125 ° C), anti-vibration, anti-electr...

Claims

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Application Information

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IPC IPC(8): H01L45/00C22C1/10
Inventor 沈祥王国祥聂秋华徐铁峰戴世勋陈芬张巍付晶
Owner NINGBO UNIV
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