Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon substrate nano-structure for solar cell and preparing method thereof

A nanostructure, solar cell technology, applied in the field of solar cells, can solve the problems of incident light reflection and transmission loss, reduce reflection, etc., achieve uniform size, improve conversion efficiency, and control the size of the effect.

Inactive Publication Date: 2012-07-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of this, the main purpose of the present invention is to provide a silicon-based nanostructure for solar cells and its preparation method, to solve the problem of incident light reflection and transmission loss in solar cells, to reduce reflection and enhance light absorption , for the purpose of obtaining higher battery efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon substrate nano-structure for solar cell and preparing method thereof
  • Silicon substrate nano-structure for solar cell and preparing method thereof
  • Silicon substrate nano-structure for solar cell and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] Such as figure 1 as shown, figure 1 A flow chart of a method for preparing a silicon-based nanostructure for a solar cell according to an embodiment of the present invention is shown, and the method specifically includes the following steps:

[0034] In step 101, the silicon wafer 201 is cleaned first. The silicon substrate can be a p-type silicon wafer or an n-type silicon wafer; preferably, a p-type silicon substrate is used.

[0035] Step 101 uses concentrated H 2 SO 4 Mix with hydrogen peroxide, heat and boil to clean, then clean with HF solution and deionized water respectively, and blow dry with nitrogen; preferably, H 2 SO 4 The ratio with hydrogen peroxide is 5:1, and the concentration of HF solution ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon substrate nano-structure for a solar cell and a preparing method thereof, and the method includes: cleaning silicon chips; spin-coating and covering single layer polystyrene (PS) spheres on the surface of the silicon chips; etching the PS spheres and reducing the sizes of the PS spheres; depositing a metal film layer on the surface of the silicon chip surface and forming metal mask; removing residual PS spheres on the silicon chip surface and remaining for the left metal masking layer; forming the silicon substrate nano-structure by using a dry etching or wet etching method; treating the silicon chips by heated concentrated acid and removing the residual metal and finishing the preparation of the silicon substrate nano-structure. According to the silicon substrate nano-structure for the solar cell and the preparing method thereof, PS spheres masking and metal film growth are utilized and the dry etching method and the wet etching method are combined so that a preparing method of silicon substrate nano-structure for the solar cell is provided. According to the silicon substrate nano-structure, the reflectivity is low, the light trapping ability is of high efficient, the light absorption of the solar cell is enhanced and the efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon-based nanostructure for solar cells and a preparation method thereof. Background technique [0002] In recent years, the environmental problems of energy shortage and global warming have become increasingly serious, and human beings have an unprecedented demand for clean and renewable energy. Photovoltaic solar energy is an important renewable energy source, which has many advantages such as extensive energy sources, less geographical restrictions, and safety and reliability. [0003] Since the first silicon solar cell was applied in 1954, the solar cell has gone through the development of the first generation of monocrystalline silicon solar cell and the second generation of thin film cell, and its technological development trend is to reduce cost and improve efficiency. [0004] At present, the solar cells used in the market are mainly crystalline silicon cells, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352B82Y40/00B82Y10/00
CPCY02P70/50
Inventor 贾锐窦丙飞陈晨李昊峰金智刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com