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Application of high dielectric constant materials in preparation of dielectric magnetic multiple device

A high dielectric constant and versatile technology, applied in the field of high dielectric constant materials in the preparation of dielectric magnetic composite devices, can solve the problem of low dielectric constant, heterogeneous co-firing of ferrite materials, and low cut-off frequency EMI filter and other issues, to achieve good dielectric temperature properties, good insulation properties, low dielectric loss effect

Active Publication Date: 2014-08-27
SHENZHEN SUNLORD ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The dielectric constant of the existing low-temperature cofired ceramics (LTCC for short) is generally relatively low, basically lower than 100, and it is difficult to design and manufacture embedded ultra-large capacitors, with ultra-low cut-off frequency EMI filter
[0003] In addition, the existing commercialized low-temperature co-fired ceramic materials cannot be heterogeneously co-fired with ferrite materials, and cannot form a dielectric and magnetic composite structure, which is not conducive to the development of new composite devices

Method used

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  • Application of high dielectric constant materials in preparation of dielectric magnetic multiple device
  • Application of high dielectric constant materials in preparation of dielectric magnetic multiple device
  • Application of high dielectric constant materials in preparation of dielectric magnetic multiple device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Weigh each powder according to the weight ratio given by the formula number A1 in Table 1: BaTiO 3 : 100.0 g, Bi 2 o 3 : 6.0 g, CuO: 2.0 g, low-melting glass: 2.0 g.

[0046] where BaTiO 3 It is an electronic grade raw material with a purity of at least 99.0% and a particle size D50≤1.0μm.

[0047] Among them Bi 2 o 3 It is an electronic grade raw material with a purity of at least 99.5% and a particle size D50≤5.0μm.

[0048] Among them, CuO is an analytically pure raw material with a purity of at least 99.0% and a particle size D50≤3.0μm.

[0049] Among them, the melting point of the low-melting point glass is lower than 800°C, and the particle size D50≤2.5μm.

[0050] The preparation method of the high dielectric constant low temperature co-fired ceramic material in this embodiment is as follows:

[0051] 1) Ball milling and mixing

[0052] BaTiO 3 、 Bi 2 o 3 , CuO and low-melting glass are mixed according to the above weight, and add 120 grams of deioniz...

Embodiment 2

[0059] Take each powder according to the weight ratio given by the formula number A2 in Table 1: BaTiO 3 : 100.0 g, Bi 2o 3 : 6.0g, CuO: 2.0g, low melting point glass: 2.5g, MnCO 3 : 0.2 g.

[0060] where BaTiO 3 、 Bi 2 o 3 , CuO and low-melting glass raw material requirements are the same as in Example 1, and the MnCO 3 It is a chemically pure raw material, and its content (calculated as Mn) is not less than 44.0%.

[0061] The preparation method of the high dielectric constant low temperature co-fired ceramic material in this embodiment is as follows:

[0062] 1) Ball milling and mixing

[0063] BaTiO 3 、 Bi 2 o 3 , CuO, low melting glass and MnCO 3 Mix according to the above weight, and add 120 grams of deionized water ball mill to obtain the ceramic material mixture;

[0064] 2) Dry the ball-milled ceramic material mixture

[0065] Dry the ceramic material mixture at a temperature of 150°C for 24 hours;

[0066] 3) Screening

[0067] The dried ceramic mater...

Embodiment 3

[0070] Take each powder according to the weight ratio given by the formula number A3 in Table 1: BaTiO 3 : 100.0 g, Bi 2 o 3 : 6.0g, CuO: 2.0g, low melting point glass: 3.0g, MnCO 3 : 0.2 g.

[0071] where BaTiO 3 、 Bi 2 o 3 , CuO, low melting glass and MnCO 3 Raw material requirement is identical with embodiment 2.

[0072] The preparation method of the high dielectric constant low temperature co-fired ceramic material in this embodiment is as follows:

[0073] 1) Ball milling and mixing

[0074] BaTiO 3 、 Bi 2 o 3 , CuO, low melting glass and MnCO 3 Mix according to the above weight, and add 120 grams of deionized water ball mill to obtain the ceramic material mixture;

[0075] 2) Dry the ball-milled ceramic material mixture

[0076] Dry the ceramic material mixture at a temperature of 150°C for 24 hours;

[0077] 3) Screening

[0078] The dried ceramic material mixture is separated by a 100-mesh screen to obtain a finished powder body of high dielectric cons...

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Abstract

The invention discloses a low temperature co-fired ceramic material with high dielectric constant. The ceramic material is characterized in that the ceramic material comprises BaTiO3 and a sintering aid; the weight percentage of the BaTiO3 is 80.0-95.0%; the sintering aid comprises 0.1-10.0% of Bi2O3, 0.1-5.0% of CuO, 0.1-8.0% of low melting glass and 0.1-1.0% of MnCO3 by weight percentage. The invention also provides a method for preparing the low temperature co-fired ceramic material with high dielectric constant. The low temperature co-fired ceramic material with high dielectric constant can be used for manufacturing filters with an embedded ultra-capacitor and is helpful to integrate function materials with different characteristics. Meantime, because of good dielectric temperature character, lower dielectric loss and good insulation characteristic, the low temperature co-fired ceramic material can be expected to be used for developing novel multiple elements and functional modules.

Description

technical field [0001] The invention relates to the use of a high dielectric constant material, in particular to the use of a high dielectric constant material in preparing dielectric magnetic composite devices. Background technique [0002] The dielectric constant of the existing low-temperature cofired ceramics (LTCC for short) is generally relatively low, basically lower than 100, and it is difficult to design and manufacture embedded ultra-large capacitors, with ultra-low cut-off frequency EMI filter. [0003] In addition, the existing commercialized low-temperature co-fired ceramic materials cannot be heterogeneously co-fired with ferrite materials, and cannot form a dielectric and magnetic composite structure, which is not conducive to the development of new composite devices. Contents of the invention [0004] A technical problem to be solved by the present invention is to make up for the defects of the above-mentioned prior art, and provide a low-temperature co-fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/468C04B35/622
Inventor 石吉伟伍隽庞新锋
Owner SHENZHEN SUNLORD ELECTRONICS
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