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PH sensor and preparation method thereof

A ph sensor, sensor technology, applied in the field of sensors, to achieve the effect of superior performance, low cost, and good stability

Pending Publication Date: 2020-06-19
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The most basic application of ISFET is in the detection of pH value. The analysis of many biochemical experiments is based on monitoring the change of pH value in biochemical reactions, but it is like winning a protracted war to achieve breakthroughs in related technologies.

Method used

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  • PH sensor and preparation method thereof
  • PH sensor and preparation method thereof

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Embodiment 1

[0033] Such as figure 2 Shown is a schematic cross-sectional structure diagram of the pH sensor of the present invention. Specifically, the fabrication method of the pH sensor includes the following processes:

[0034] In SiO 2 (300nm) / Si substrate is spin-coated with a layer of SU-8 GM10xx series photoresist with a thickness of 3μm, and the exposure is obtained to deposit MoS 2 The patterning of thin films, followed by deposition of MoS using CVD method 2 Thin film, the specific process is as follows: the temperature of the growth zone is 650°C, the temperature of the sulfur zone is 180°C, the loading amount of sulfur source and molybdenum source is 1000mg and 100mg respectively, the growth time is 20min, and the flow rate of carrier gas is 10sccm. Then go to Glue to get MoS 2 Film graphics. Source and drain electrodes were fabricated using photolithography and electron beam evaporation. The size of a single chip is 10 μm. Both the thickness of the source electrode an...

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Abstract

The invention discloses a pH sensor and a preparation method thereof. The pH sensor comprises an insulating substrate material, a MoS2 film deposited on the insulating substrate material, a source electrode, a drain electrode and a dielectric material, wherein the source electrode, the drain electrode and the dielectric material are formed around the MoS2 film to form a closed sensor groove. The preparation method comprises the following steps: (1) cleaning a substrate, and coating a layer of photoresist on the substrate; (2) exposing the photoresist to form a MoS2 film deposition area; (3) depositing MoS2 in the region by using a chemical vapor deposition technology to form a MoS2 film; (4) the photoresist is removed, the MoS2 film pattern is reserved, and then a source electrode and a drain electrode are formed on the outer side of the MoS2 film pattern; and (5) depositing a dielectric material to form a sensor groove to obtain the device unit of the pH sensor. The pH sensor constructed by the invention is excellent in electrical signal, high in sensitivity and good in stability.

Description

technical field [0001] The invention relates to a pH sensor and a preparation method thereof, belonging to the technical field of sensors. Background technique [0002] As a sensitive device for detecting biochemical signals, Ion-Sensitive Field Effect Transistor (ISFET) was first proposed by Dutch scientist P. Bergveld in 1970 and used for neurophysiological measurements. This has opened a new prelude to the research of biochemical sensors, injected new vitality into the research of electrochemical biochemical sensors, and has epoch-making significance. [0003] The most basic application of ISFET is in the detection of pH value. The analysis of many biochemical experiments is based on monitoring the change of pH value in biochemical reactions, but the breakthrough of related technologies is like winning a protracted war. . For example, many species of bacteria need to be grown in specific Petri dishes, and they exist in isolation until they reach sufficient numbers under...

Claims

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Application Information

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IPC IPC(8): G01N27/414H01L29/786H01L29/24H01L21/34
CPCG01N27/414H01L29/786H01L29/66969H01L29/24
Inventor 赵鸿滨屠海令魏峰张国成
Owner GRIMAT ENG INST CO LTD
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