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Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate

A tungsten-titanium alloy and diffusion welding technology, which is applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of poor welding effect between tungsten-titanium alloy target and copper alloy back plate, harsh process conditions, etc., and achieve The effect of reducing the difference in local welding effects, low temperature requirements, and cost reduction

Active Publication Date: 2012-07-11
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a method for diffusion welding of a tungsten-titanium alloy target and a copper alloy backplate, which solves the problem of tungsten-titanium alloy target and copper alloy backplate in the existing welding process of the tungsten-titanium alloy target and copper alloy backplate The problem of poor welding effect and demanding process conditions

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  • Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate
  • Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate
  • Diffusion welding method for tungsten-titanium alloy target and copper alloy back plate

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Embodiment 1

[0053] The following are the process steps and welding results of diffusion welding of 99.995% high-purity tungsten-titanium alloy target material (the purity ratio of tungsten to titanium is 9:1) and copper alloy back plate. Wherein, the tungsten-titanium alloy target is rectangular, and the area of ​​its pre-bonded surface (that is, the welding surface with the copper alloy back plate) is 0.15m 2 .

[0054] (1) Surface processing of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate: pre-bonding surface of tungsten-titanium alloy target, copper alloy back plate pre-bonding surface, and upper and lower aluminum diffusion auxiliary layer The end surface is machined to make it bright, and the smoothness of the contact surface of the three reaches 0.25μm.

[0055] (2) Chemical cleaning of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate: the surface of tungsten-titanium alloy target, alumi...

Embodiment 2

[0065] The following are the process steps and welding results of diffusion welding of 99.99% high-purity tungsten-titanium alloy target (the purity ratio of tungsten to titanium is 9:1) and copper alloy backplane: wherein, the tungsten-titanium alloy target is circular , the diameter of its pre-combined surface is 400mm.

[0066] (1) Surface processing of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate: pre-bonding surface of tungsten-titanium alloy target, copper alloy back plate pre-bonding surface, and upper and lower aluminum diffusion auxiliary layer The end surface is machined to make it bright, and the smoothness of the contact surface of the three reaches 0.30μm.

[0067] (2) Chemical cleaning of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy backplane: the surface of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy backplane is cleaned with hydrochlo...

Embodiment 3

[0077] The following are the process steps and welding results of diffusion welding of 99.99% high-purity tungsten-titanium alloy target (the purity ratio of tungsten to titanium is 9:1) and copper alloy backplane: wherein, the tungsten-titanium alloy target is circular , the diameter of its pre-combined surface is 450mm.

[0078] (1) Surface processing of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate: pre-bonding surface of tungsten-titanium alloy target, copper alloy back plate pre-bonding surface, and upper and lower aluminum diffusion auxiliary layer The end surface is machined to make it bright, and the smoothness of the contact surface of the three reaches 0.32μm.

[0079] (2) Chemical cleaning of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate: the surface of tungsten-titanium alloy target, aluminum diffusion auxiliary layer and copper alloy back plate is cleaned with hydroch...

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Abstract

Disclosed is a diffusion welding method for a tungsten-titanium alloy target and a copper alloy back plate. An aluminum diffusion auxiliary layer is arranged between the tungsten-titanium alloy target and the copper alloy back plate, diffusion welding of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is realized by the aid of high-strength atomic diffusivity between the tungsten-titanium alloy target and the aluminum diffusion auxiliary layer and between the aluminum diffusion auxiliary layer and the copper alloy back plate, and finally, welding quality of the tungsten-titanium alloy target and the copper alloy back plate is improved. Diffusion welding of the tungsten-titanium alloy target and the copper alloy back plate is implemented by a hot isostatic pressing process. As diffusion welding is performed in a vacuum sheath and air is isolated, the contact surface of welded metal can be effectively prevented from being oxidized, the bonding strength of the tungsten-titanium alloy target, the aluminum diffusion auxiliary layer and the copper alloy back plate is enhanced, the target is prevented from being separated from the back plate during sputtering, and sputtering coating is normally performed. A target assembly formed by the diffusion welding method has the advantages of high bonding compactness, high thermal deformation resistance and the like.

Description

technical field [0001] The invention relates to the manufacture of sputtering targets in the field of semiconductors, in particular to a diffusion welding method for a tungsten-titanium alloy target and a copper alloy back plate. Background technique [0002] High-purity tungsten, titanium or their alloys have high resistance to electron migration, high temperature stability and the ability to form stable silicides, so they are often used as gate, connection, transition and barrier metal layers in the form of thin films in the electronics industry. use. Especially in the preparation of VLSI, it has good performance as a resistance layer and a diffusion barrier layer. [0003] In the modern large-scale integrated circuit manufacturing process, magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, and good film-substrate bonding force. High-purity tungsten targets and high-p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/14B23K20/233B23K20/16
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽陈勇军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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