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Device material for hole injection/transport layer, ink for forming hole injection/transport layer, device having hole injection/transport layer, and method for manufacturing same

A technology of hole injection and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. It can solve problems such as material degradation and hole transport damage, and achieve high light resistance and life-span improvement.

Inactive Publication Date: 2012-05-23
DAI NIPPON PRINTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case where the wettability-changing layer has hole-transporting properties, there is a problem that the material is degraded and the hole-transporting property is deteriorated in the part that can be reached by the action of the photocatalyst accompanying energy irradiation or the part irradiated with vacuum ultraviolet light. Sexuality, etc. will be compromised

Method used

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  • Device material for hole injection/transport layer, ink for forming hole injection/transport layer, device having hole injection/transport layer, and method for manufacturing same
  • Device material for hole injection/transport layer, ink for forming hole injection/transport layer, device having hole injection/transport layer, and method for manufacturing same
  • Device material for hole injection/transport layer, ink for forming hole injection/transport layer, device having hole injection/transport layer, and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0383] Examples are given below to describe the present invention more specifically. These descriptions do not limit the present invention. In addition, in an Example, unless otherwise specified, a part means a weight part. In addition, the thickness of a layer or a film is represented by an average film thickness.

[0384] The present invention will be described more specifically by giving examples of organic EL elements below. It should be noted that the present invention is not limited to the description of the following examples.

[0385] The structures of the compounds obtained in the following synthesis examples were confirmed by 1H NMR (α-400 manufactured by JEOL Ltd.) and mass spectrometry (JMS600 manufactured by JEOL Ltd.). The NMR spectrum of the obtained compound is shown in Figures 13 to 16 .

Synthetic example 1

[0386] [Synthesis Example 1: Synthesis of Fluorine-Containing Organic Compound F-1]

[0387] 2, 2, 3, 3, 4, 4, 5, 5, 6, 6, 7, Fluorine-containing organic compound F-1 was synthesized by condensation reaction of 7,7-tridecafluoroheptanoic acid (manufactured by Aldrich) and 1,4-diaminobutane (manufactured by Tokyo Chemical Industry Co., Ltd.).

[0388] The molecular weight of the obtained compound F-1 was confirmed to be 434 by mass analysis, and it was confirmed by 1H NMR that a compound of the following structural formula was synthesized.

[0389] [chemical 5]

[0390]

Synthetic example 2

[0391] [Synthesis Example 2: Synthesis of Fluorine-Containing Organic Compound F-2]

[0392] In chloroform, in the presence of triethylamine, the condensation reaction of 1H, 1H, 2H, 2H-tridecafluoro-n-octyl iodide (manufactured by Tokyo Chemical Industry Co., Ltd.) and 2-aminoethanethiol (manufactured by Tokyo Chemical Industry Co., Ltd.), A fluorine-containing organic compound F-2 was synthesized. The molecular weight of the obtained compound F-2 was confirmed to be 423 by mass analysis, and it was confirmed by 1H NMR that a compound of the following structural formula was synthesized.

[0393] [chemical 6]

[0394]

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PUM

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Abstract

Disclosed is a device material for a hole injection / transport layer, which has wettability that is changed by energy irradiation, high processing resistance and excellent hole injection / transport properties. The device material for a hole injection / transport layer is capable of forming a hole injection / transport layer by a solution coating method. Also disclosed are: an ink for a hole injection / transport layer, which uses the device material; a device having a long life, wherein a layer arranged on a hole injection / transport layer can be patterned; and a method for manufacturing the device. Specifically disclosed is a device material for a hole injection / transport layer, which is characterized in that a fluorine-containing organic compound adheres to an organic-transition metal oxide composite that is a reaction product of an organic transition metal complex. Also specifically disclosed are an ink for a hole injection / transport layer, a device and a method for manufacturing the device, each using the device material.

Description

technical field [0001] The present invention relates to a device material for a hole injection transport layer that changes wettability by energy irradiation and has hole injection transport properties, and an ink for forming a hole injection transport layer using the device material that has hole injection transport properties. Layer devices and methods of fabrication thereof. Background technique [0002] As a device having a hole injection transport layer, it has been expected to be used in organic devices such as organic electroluminescent elements (hereinafter referred to as organic EL elements), organic transistors, organic solar cells, organic semiconductors, quantum dot light-emitting elements, and oxide-based compounds. Developments in a wide range of basic elements and uses such as solar cells. [0003] For example, an organic EL element is a charge-injection type self-luminous device that utilizes light emission that occurs when electrons and holes that reach the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H05B33/10
CPCH05B33/10H01L51/5088H01L51/5048H05B33/26H01L51/0005H10K71/135H10K50/14H10K50/17H10K85/624H10K50/15
Inventor 上野滋弘冈田政人
Owner DAI NIPPON PRINTING CO LTD
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