Thin film solar cell and formation method thereof
A technology for solar cells and thin films, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of contaminating the I-type amorphous silicon layer 13, reducing the photoelectric conversion efficiency of thin-film solar cells, and reducing the band gap width of thin-film solar cells, etc. Achieve the effect of improving photoelectric conversion efficiency, increasing band gap width, and reducing pollution
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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0037] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than here, so the present invention is not limited by the specific embodiments disclosed below.
[0038] As mentioned in the background section, in the prior art, both the P-type semiconductor layer and the N-type semiconductor layer are uniformly doped. In order to reduce the pollution to the I-type semiconductor layer, it is necessary to reduce the doping ion concentration of the P-type semiconductor layer and the N-type semiconductor layer; but in order to increase the bandgap width, it is necessary to increase the doping of the P-type semiconducto...
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