Thin film solar cell and formation method thereof

A technology for solar cells and thin films, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of contaminating the I-type amorphous silicon layer 13, reducing the photoelectric conversion efficiency of thin-film solar cells, and reducing the band gap width of thin-film solar cells, etc. Achieve the effect of improving photoelectric conversion efficiency, increasing band gap width, and reducing pollution

Inactive Publication Date: 2012-05-09
SILEVO CHINA
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Problems solved by technology

[0006] But there is following defect in above-mentioned technology: when the dopant ion concentration in P-type amorphous silicon layer 12 or N-type amorphous silicon layer 14 is higher, then P-type amorphous silicon layer 12 or N-type amorphous silicon layer 14 will Contaminate the I-type amorphous silicon layer 13, thereby reducing the photoelectric conversion efficiency of the thin-film solar cell; The bandgap width of the battery will also reduce the photoelectric conversion efficiency of thin-film solar cells

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  • Thin film solar cell and formation method thereof
  • Thin film solar cell and formation method thereof
  • Thin film solar cell and formation method thereof

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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than here, so the present invention is not limited by the specific embodiments disclosed below.

[0038] As mentioned in the background section, in the prior art, both the P-type semiconductor layer and the N-type semiconductor layer are uniformly doped. In order to reduce the pollution to the I-type semiconductor layer, it is necessary to reduce the doping ion concentration of the P-type semiconductor layer and the N-type semiconductor layer; but in order to increase the bandgap width, it is necessary to increase the doping of the P-type semiconducto...

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Abstract

The invention relates to a thin film solar cell and a formation method thereof. The thin film solar cell comprises a substrate, a photoelectric conversion unit, an anti-reflective layer, a positive electrode, and a backplate. The photoelectric conversion unit, which is arranged on the upper surface of the substrate, includes a P type semiconductor layer, an I type semiconductor layer, and an N type semiconductor layer; doped ion concentration in the P type semiconductor layer is successively increased along a direction from a position close to the I type semiconductor layer to a position far from the I type semiconductor layer; and doped ion concentration in the N type semiconductor layer is successively increased along a direction from a position close to the I type semiconductor layer to a position far from the I type semiconductor layer. Besides, the anti-reflective layer is arranged on the upper surface of the photoelectric conversion unit; the positive electrode is arranged on the upper surface of the anti-reflective layer; and the backplate is arranged on the lower surface of the substrate. According to the invention, pollution on an I type semiconductor layer by a P type semiconductor layer or an N type semiconductor layer can be reduced; and a broad band gap can be realized; therefore, photoelectric conversion efficiency is high.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a thin-film solar cell and a forming method thereof. Background technique [0002] Thin-film solar cells are solar cells formed by depositing very thin (several micrometers to tens of micrometers) photoelectric materials on substrates such as glass, metal or plastic. Thin-film solar cells have a series of advantages such as power generation under weak light conditions, low energy consumption in the production process, and can greatly reduce raw material and manufacturing costs. They have become a research hotspot in recent years, and their market development potential is huge. [0003] Basic thin film solar cell structure, including single P-N junction, P-I-N / N-I-P and multi-junction. A typical single-junction P-N structure includes a P-type doped layer and an N-type doped layer. Single-junction P-N junction solar cells have two structures: homojunction and hetero...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/076H01L31/18
CPCY02E10/50Y02E10/548Y02P70/50
Inventor 傅建明杨瑞鹏
Owner SILEVO CHINA
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