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Method for preparing high thermal stability double layer diffusion impervious layer material

A technology with high thermal stability and barrier layer, which is applied in metal material coating process, coating, semiconductor/solid-state device manufacturing, etc., to improve thermal stability, maintain integrity and avoid oxidation

Inactive Publication Date: 2012-03-28
NANJING UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the Ru thin film itself is not a good diffusion barrier

Method used

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  • Method for preparing high thermal stability double layer diffusion impervious layer material
  • Method for preparing high thermal stability double layer diffusion impervious layer material
  • Method for preparing high thermal stability double layer diffusion impervious layer material

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Experimental program
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Embodiment Construction

[0028] Ru / TaN films with different N contents were prepared by DC magnetron sputtering. A JGP350 magnetron sputtering apparatus uses an electromagnetic target with a diameter of 60mm and only DC is added, and the maximum sputtering power is 400W. A six-station sample turntable with revolution function, the sample can be heated or water-cooled, the maximum temperature can reach 550°C, the heating rate can be adjusted from 10°C / min to 40°C / min, suitable for the preparation of various materials film. The vacuum system is mainly equipped with a 2XZ-8 mechanical pump and FB600 turbomolecular pump, the highest vacuum degree can reach 6.6×10 -5 Pa, the ultra-high vacuum effectively protects the quality of the film.

[0029] Material preparation: the sputtering target is 99.9% Ta, 99.9% Ru, 99.999% Cu with a diameter of 60 mm and a thickness of about 3 mm, and the substrate is single crystal Si (111). In order to improve the adhesion between the TaN film and the substrate, before th...

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Abstract

The invention provides a method for preparing a high thermal stability double layer diffusion impervious layer material. The method is characterized in that a direct current magnetron sputtering process is employed, accurate control of N content in an amorphous TaN film is realized by regulating N air flow rate, a high performance double layer Ru / TaN diffusion impervious layer structure with different N content is prepared, the effective work is stably as high as 650 DEG C. N atoms in gap of the TaN film are diffused during the annealing process and then raise the diffusion impervious performance of the Ru / TaN bilaminar membrane. The thermal stability double layer diffusion impervious layer material can be obtained by accurately controlling the N content, and is capable of keeping excellent electrical performance and better ensuring its practical application. The invention has the advantages of simple operation, good repeatability and good realization effect.

Description

technical field [0001] The invention relates to a high thermal stability Ru / TaN double-layer diffusion barrier film material and its preparation. Background technique [0002] With the rapid development of science and technology, semiconductor manufacturing technology is facing rapid changes. The traditional semiconductor process mainly uses aluminum as the metal interconnect material (Interconnect), which has been limited in signal delay. Compared with aluminum, copper has good conductivity and electromigration properties, so copper has replaced aluminum as the main interconnection material in the manufacture of ultra-large-scale integrated circuits (ULSI). Simply put, a series of semiconductor manufacturing processes using copper as metal interconnection materials can increase the integration of chips, increase device density, increase clock frequency and reduce energy consumption. However, copper is very easy to diffuse on the silicon-based substrate to form a copper-si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35H01L21/285
Inventor 孟祥康汪蕾操振华胡坤佘茜玮
Owner NANJING UNIV
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