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Preparation method of aluminum-boron alloy powder and aluminum-boron slurry of crystalline silicon cell

A technology for solar cells, aluminum boron alloys, used in metal/alloy conductors, cable/conductor manufacturing, conductive materials dispersed in non-conductive inorganic materials, etc.

Inactive Publication Date: 2012-03-07
NANCHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods may increase the p-type doping concentration in the back surface field of crystalline silicon solar cells to a certain extent, but since the aluminum source and boron source are completely separated in the aluminum-boron paste, such a boron source is In the process, it is usually free from the aluminum-silicon eutectic, and it is not easy to be mixed into the aluminum-silicon eutectic to form effective doping. Obviously, this is an indirect boron doping method, and its doping effect is low.

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  • Preparation method of aluminum-boron alloy powder and aluminum-boron slurry of crystalline silicon cell
  • Preparation method of aluminum-boron alloy powder and aluminum-boron slurry of crystalline silicon cell

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example 1

[0029] 2) Mix the four substances of aluminum-boron alloy powder, inorganic glass binder, organic binder and additives with mass percentages of 72-82%, 0.1-10%, 15-25%, and 1-5%, respectively, and mix Finally, a conductive aluminum-boron slurry with a particle size of ≤15 μm and a viscosity of 30,000-40,000 mPa·s is rolled with a three-roll rolling mill;

[0030] 3) Silicon wafer cleaning, acid removal of damaged layer, pn junction fabrication, edge etching, silicon nitride film deposition, printing and sintering of the back surface field and front and back electrodes, wherein the preparation method of the back surface field is to adopt the method of the present invention The obtained aluminum-boron paste and conventional aluminum paste (Flue AL840 conductive aluminum paste) were uniformly coated on the back surface of the crystalline silicon battery by screen printing, and after drying, they were respectively sintered at 800°C for no more than 3min.

[0031] Various perform...

example 2

[0036] 2) Mix the four substances of aluminum-boron alloy powder, inorganic glass binder, organic binder and additives with mass percentages of 72-82%, 0.1-10%, 15-25%, and 1-5%, respectively, and mix Finally, a conductive aluminum-boron slurry with a particle size of ≤15 μm and a viscosity of 30,000-40,000 mPa·s is rolled with a three-roll rolling mill;

[0037] 3) Silicon wafer cleaning, acid removal of damaged layer, pn junction fabrication, edge etching, silicon nitride film deposition, printing and sintering of back field and positive and negative electrodes, wherein the preparation method of back surface field is obtained by the present invention The aluminum-boron paste and the conventional aluminum paste (Flue AL840 conductive aluminum paste) are evenly coated on the back surface of the crystalline silicon battery by screen printing, and after drying, they are respectively sintered at 800 ° C for no more than 3 minutes. .

[0038] Various performance parameters of the...

example 3

[0043] 2) Mix the four substances of aluminum-boron alloy powder, inorganic glass binder, organic binder and additives with mass percentages of 72-82%, 0.1-10%, 15-25%, and 1-5%, respectively, and mix Finally, a conductive aluminum-boron slurry with a particle size of ≤15 μm and a viscosity of 30,000-40,000 mPa·s is rolled with a three-roll rolling mill;

[0044] 3) Silicon wafer cleaning, acid removal of damaged layer, pn junction fabrication, edge etching, silicon nitride film deposition, printing and sintering of back field and positive and negative electrodes, wherein the preparation method of back surface field is obtained by the present invention The aluminum-boron paste and the conventional aluminum paste (Flue AL840 conductive aluminum paste) are evenly coated on the back surface of the crystalline silicon battery by screen printing, and after drying, they are respectively sintered at 800 ° C for no more than 3 minutes. .

[0045] Various performance parameters of the...

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Abstract

The invention relates to a preparation method of an aluminum-boron alloy powder and aluminum-boron slurry of a crystalline silicon cell. The preparation method comprises the following special implementation steps of: carrying out reduction reaction and gas atomization on a boron compound in molten liquid aluminum to prepare the aluminum-boron alloy; and mixing 72-82% of aluminum-boron alloy powder by mass, 0.1-10% of inorganic glass adhesion agent by mass, 15-25% of organic adhesion agent by mass and 1-5% of additive to prepare the aluminum-boron slurry. In a back surface field of the crystalline silicon cell which is prepared from the aluminum-boron slurry in the invention, a p-type doping concentration is one order of magnitude more than the p-type doping concentration of the back surface field prepared from the normal aluminum slurry at the same temperature, so that the inactivation effect on the back surface of the crystalline silicon cell is more excellent; and meanwhile, serial-connection resistance of the cell is reduced so that the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to a method for preparing aluminum-boron slurry made of aluminum-boron alloy powder, inorganic glass binder, organic binder and additives. The aluminum-boron slurry is mainly used to prepare crystalline silicon (p-type) solar energy The back surface field and the back electrode of the battery can also be used for n-type crystalline silicon to prepare a pn junction, and belong to the technical field of crystalline silicon solar cell manufacturing. Background technique [0002] Solar energy is widely distributed and is an inexhaustible clean energy. Solar cells convert solar energy into electrical energy. At present, more than 80% of the solar cells in the world are crystalline silicon solar cells, further improving the photoelectric conversion efficiency of crystalline silicon solar cells has huge social and economic benefits. [0003] The power generation mechanism of crystalline silicon solar cells mainly depends on the pn junc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/02H01B1/22
Inventor 杜国平陈斌陈楠
Owner NANCHANG UNIV
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