Resistance type gas sensor with two support suspension beams and six-layer structure, and method thereof

A gas sensor and resistive technology, which is applied to resistive gas sensors with a six-layer structure of two-support cantilever beams and the field, can solve the problems of expensive process equipment, strict environmental conditions, and high cost, and achieve improved temperature uniformity and high mechanical strength. , the effect of low cost

Inactive Publication Date: 2012-02-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thin-film gas sensors have the advantages of low material consumption, repeatability between sensors, and good mechanical strength of the sensor, but the manufacturing process of thin-film sensors requires complex and expensive process equipment, strict environmental conditions, and high cost
The silicon-based microstructure thin-film gas sensor is a new type of resistive gas sensor based on a micro-heater. The current mainstream is based on a closed-membrane or four-cantilever-beam micro-heater, and the power consumption is relatively high.

Method used

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  • Resistance type gas sensor with two support suspension beams and six-layer structure, and method thereof
  • Resistance type gas sensor with two support suspension beams and six-layer structure, and method thereof
  • Resistance type gas sensor with two support suspension beams and six-layer structure, and method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] The structure schematic diagram of this embodiment sees figure 1 As shown, the specific production method is as follows:

[0040] 1. Select the substrate. A 4-inch double-sided polished silicon wafer with an N-type (100) surface is selected as a substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of trimming is <1%.

[0041] 2. Make a composite film. A single-layer composite film is used to sequentially grow a layer of silicon oxide with a thickness of 0.5 microns and a layer of silicon nitride with a thickness of 0.3 microns by means of low-pressure chemical vapor deposition (LPCVD).

[0042] 3. Make heating resistance wire, power supply lead wire and power supply electrode. Manufactured using a lift-off process. Thin photolithography (photoresist thickness is 2.0 microns) defines the pattern of heating resistance wire, power supply lead and power supply electrode, and then sputters a layer of 0.2 micron ...

Embodiment 2

[0049] The structure schematic diagram of this embodiment sees Figure 4 As shown, the specific production method is as follows:

[0050] 1. Select the substrate. A 4-inch double-sided polished silicon wafer with a P-type (100) surface is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of the edge trimming is less than 1%.

[0051] 2. Make a composite film. Using a single-layer composite film, a layer of silicon oxide with a thickness of 0.4 microns and a layer of silicon nitride with a thickness of 0.6 microns are sequentially grown by plasma enhanced chemical vapor deposition (PECVD).

[0052] 3. Make heating resistance wire, power supply lead wire and power supply electrode. Manufactured by wet etching process. First sputter a layer of titanium platinum with a thickness of 0.2 microns, then perform thin photolithography (the thickness of the photoresist is 1.8 microns) to define the pattern...

Embodiment 3

[0059] The structure schematic diagram of this embodiment sees Figure 5 As shown, the specific production method is as follows:

[0060] 1. Select the substrate. A 4-inch double-sided polished silicon wafer with a P-type (111) surface is selected as the substrate, the resistivity is 3-8Ω·cm, the thickness of the silicon wafer is 350±10 microns, and the angle error of the edge trimming is less than 1%.

[0061] 2. Make a composite film. Using a multi-layer composite film, a layer of silicon oxide with a thickness of 0.2 microns and a layer of silicon nitride with a thickness of 0.2 microns are sequentially deposited by low-pressure chemical vapor deposition (LPCVD), and then plasma-enhanced chemical vapor deposition (PECVD) A method of depositing a layer of silicon oxide with a thickness of 0.2 microns and a layer of silicon nitride with a thickness of 0.2 microns in sequence.

[0062] 3. Make heating resistance wire, power supply lead wire and power supply electrode. Manu...

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Abstract

The present invention relates to a resistance type gas sensor with two support suspension beams and a six-layer structure, and a preparation method thereof. A structure of the sensor comprises: a substrate framework, a heat insulation cavity, a heating membrane area, transition areas, support beams, a heating resistance wire, power supply lead wires, power supply electrodes, a separation layer, interdigital electrodes, detection lead wires, detection electrodes and a sensitive membrane. The structure of the sensor is characterized in that: the heating membrane area positioned above the heat insulation cavity is connected with the substrate framework by the transition zones and the support suspension beams; the heating resistance wire is assigned on the heating membrane area in a polyline manner, and is connected with the power supply electrodes positioned on the substrate framework by the power supply lead wires; the separation layer is covered on the heating membrane area and the support suspension beams, and is tightly coated on the heating resistance wire and the power supply lead wires; the interdigital electrodes are arranged on the separation layer, and are connected with the detection electrodes by the detection lead wires; the sensitive membrane is positioned on the position of the separation layer positioned on the heating membrane area, is covered on the whole interdigitated electrodes, and forms a good electrical connection with the interdigitated electrodes.

Description

technical field [0001] The invention relates to a resistive gas sensor with a six-layer structure of two supporting suspension beams and a manufacturing method. The combination of microfabrication technology and traditional chemical synthesis technology belongs to the field of microelectromechanical systems (MEMS) and gas sensing. Background technique [0002] Gas sensors have been widely used in the three major fields of industry, civil and environmental monitoring. At present, there are many methods and means for detecting gas, mainly including catalytic combustion, electrochemical, thermal conductivity, infrared absorption and semiconductor gas sensors. Due to the advantages of high sensitivity, convenient operation, small size, low cost, short response time and recovery time, resistive semiconductor sensors are widely used, especially for flammable and explosive gases (such as CH 4 , H 2 etc.) and toxic and harmful gases (such as CO, NO x etc.) plays an important rol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04B81B7/00B81C1/00
Inventor 李铁许磊王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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