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Methods of forming photolithographic patterns

A lithography patterning and patterning technology, applied in the field of lithography process, can solve the problems of small exposure latitude, small processing window, explosion, etc.

Active Publication Date: 2012-02-01
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of this material is not satisfactory for various reasons
From a safety standpoint, NBAs are problematic because NBAs have a relatively low flash point of 22°C, and since process equipment typically has moving mechanical and electrical parts that can ignite solvent vapors and air Electrical or static sparking of mixtures, which can cause fire and explosion accidents
In addition, it was found that the exposure latitude is relatively small when using NBA, thus providing a smaller than suitable processing window

Method used

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  • Methods of forming photolithographic patterns
  • Methods of forming photolithographic patterns
  • Methods of forming photolithographic patterns

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The procedure in Comparative Example 1 was repeated except that 5-methyl-2-hexanone was used instead of n-butyl acetate as the developer. Provides a 60nm (measured 61.25nm) target CD exposure is 39.40mJ / cm 2 . In this case, the precise pattern of the contact hole has a uniform size and final shape. The resulting exposure latitude is 15% and the CD uniformity (3σ) is 7.22.

Embodiment 2

[0057] The procedure in Comparative Example 1 was repeated except that 2-heptanone was used instead of n-butyl acetate as the developer. Visual inspection after development showed no residue on the wafer surface. Provides a 60nm (measured 60.73nm) target CD exposure is 51.10mJ / cm 2 . In this case, the precise pattern of the contact hole has a uniform size and final shape. The resulting exposure latitude is 32% and the CD uniformity (3σ) is 7.07.

[0058] Table 1

[0059] Comparison

[0060] *Safety standards advocated by the National Fire Protection Association (U.S.). Each item of health, flammability and reaction is evaluated from 0 (no danger; ordinary substance) to 4 (severe danger).

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PUM

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Abstract

Provided are methods of forming photolithographic patterns using a negative tone development process. Also provided are coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices. The method includes: (a) providing a substrate comprising over a surface thereof one or more layer to be patterned; (b) applying a layer of a photoresist composition over the one or more layer to be patterned, the photoresist composition comprising a resin comprising an acid cleavable group and an acid generator; (c) patternwise exposing the photoresist composition layer to actinic radiation; and (d) applying a developer to the photoresist composition layer, wherein unexposed portions of the photoresist layer are removed by the developer, leaving a photoresist pattern over the one or more layer to be patterned. The developer comprises 2-heptanone and / or 5-methyl-2-hexanone.

Description

Technical field [0001] The invention mainly relates to the manufacture of electronic devices. More specifically, the present invention relates to a photolithography process that uses a negative tone development process to form fine patterns, which uses a special organic material as a developer. Background of the invention [0002] In the semiconductor manufacturing industry, photoresist materials are used to transfer patterns to one or more underlying layers arranged on a semiconductor substrate, such as metal, semiconductor, and dielectric layers, and onto the substrate itself. In order to increase the degree of integration of semiconductor devices and to take into account the formation of structures with dimensions in the nanometer range, photoresists and lithography process tools with high resolution capabilities have been developed. [0003] One way to achieve nanoscale functional element sizes in semiconductor devices is to use short-wavelength light, such as 193 nm or less, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/004G03F7/038
CPCG03F7/09H01L21/0273G03F7/325G03F7/0392G03F7/203Y10T428/24802G03F7/2022
Inventor 姜锡昊C·科尔特
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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