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Method for rapidly preparing large-area and uniform black silicon material, and device thereof

A large-area, black silicon technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problems of poor surface microstructure uniformity, low efficiency, and inability to meet mass production, and achieve high preparation efficiency and uniformity Good results

Inactive Publication Date: 2012-01-18
SOUTHWEAT UNIV OF SCI & TECH
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Problems solved by technology

The method of preparing black silicon by this point-scanning method has extremely low efficiency and poor uniformity of the surface microstructure, making it impossible to achieve large-area preparation, especially for mass production.

Method used

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  • Method for rapidly preparing large-area and uniform black silicon material, and device thereof
  • Method for rapidly preparing large-area and uniform black silicon material, and device thereof
  • Method for rapidly preparing large-area and uniform black silicon material, and device thereof

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Embodiment Construction

[0028] In order to describe the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0029] The invention discloses a method and equipment for rapidly preparing large-area black silicon materials by using pulsed laser raster scanning. figure 1It is a schematic diagram of the equipment structure and laser light path for rapid preparation of black silicon materials. The laser 10 emits a pulsed laser beam with a pulse width ranging from femtoseconds to milliseconds, including femtoseconds, picoseconds, nanoseconds, etc.; the output frequency of the laser 10 ranges from 0.1-100K Hz, and the single pulse energy output by the laser 10 ranges from Joule - 1000 Joule range. Because the beam output by the laser 10 is generally a circular beam, in order to obtain a surface microstructure with uniform physical and chemical prop...

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Abstract

The present invention discloses a method for rapidly preparing a large-area and uniform black silicon material through pulsed laser grating type scanning, and a device thereof. The method comprises the following steps: 1, placing a silicon substrate in a black silicon preparing environment; 2, shaping laser beams, converging the laser beams into a strip light spot to irradiate a surface of the silicon substrate; 3, adopting the laser to carry out grating type scanning for the surface of the silicon substrate, growing a microstructure on the surface of the silicon substrate to form the black silicon. With the method and the device provided by the present invention, the black silicon can be directly prepared on the 2 inch silicon substrate, 4 inch silicon substrate, or larger silicon substrate through the one-time scanning, the surface microstructure of the prepared black silicon has good uniformity, and the method can meet the actual requirements of mass production.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a method and equipment for rapidly and efficiently preparing large-area uniform black silicon materials. Background technique [0002] In recent years, the surface treatment, surface processing and application technology of growing micro-nano structures on the surface of solid materials based on pulsed laser scanning irradiation have attracted extensive attention. Eric Mazur's research group at Harvard University in the United States prepared a quasi-periodically distributed conical microstructure on the silicon surface during the study of the femtosecond laser's interaction with the silicon surface in a chalcogenide gas environment, which exhibited ultrahigh Broad spectrum absorption characteristics and super infrared light absorption characteristics, this is the so-called black silicon material. [0003] This discovery has attracted widespread at...

Claims

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Application Information

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IPC IPC(8): C30B33/00C30B31/20H01L31/0288H01L31/102
Inventor 邱荣李晓红王俊波周自刚胡思福
Owner SOUTHWEAT UNIV OF SCI & TECH
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