Method for integrating silicon-based lithium niobate thin film electro-optic modulator arrays

Abstract

The object of the present invention is to provide a method for integrating large-scale silicon-based lithium niobate thin film electro-optic modulator arrays in view of the deficiencies of the prior art. By using the method, the preparation process difficulty of the lithium niobate crystal layers is reduced, the precision requirement for the bonding of lithium niobate and silicon is reduced, and the preparation and bonding of the large-scale array-type lithium niobate crystal layers can be simultaneously completed at one time, so that production efficiency of the lithium-based lithium niobatethin film electro-optic modulator arrays is greatly improved; by structurally designing and optimizing the silicon crystal layer, the light can be naturally alternated and mutually transmitted in thesilicon waveguide and the lithium niobate waveguide, so that a high-performance lithium niobate film electro-optic modulation effect is achieved; and in addition, the advantages of standardized silicon-based integration technology maturity are used in the method, and the complex chip preparation process is concentrated on the silicon crystal layer, so that the process error in the chip fabricationprocess can be reduced, and performance stability of the entire silicon-based lithium niobate film electro-optic modulator array is ensured.

Description

technical field [0001] The invention relates to the technical field of optoelectronic integrated devices, in particular to a silicon-based lithium niobate thin-film electro-optic modulator array integration method. [0002] technical background [0003] The electro-optic modulator loads the electrical signal onto the optical signal, and is the signal input interface of optical signal processing systems such as optical communication and microwave photonic radar. Its performance directly determines the performance of the optical signal processing system, so it has become a very important photonic device. In order to realize an integrated electro-optic modulator on a chip, an electro-optic modulator using a standardized silicon-based integration process has emerged (see Document 1: Ding Jianfeng, Zhang Lei, Yang Lin, "Silicon-based integrated differential electro-optic modulator and its preparation method", National invention patent CN105044931B, 2015). Using doped silicon as ...

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Problems solved by technology

However, the use of doped silicon as a light-guiding medium has the following problems: doped silicon has an absorption effect on light, which will significantly increase the insertion loss of the electro-optic modulator; the modulation efficiency of doped silicon is low, so the designed half-wave voltage Usually higher, reducing the conversion rate of electro-optic modulation

However, the bonding method has the notable feature of low production efficiency, which cannot be applied to the preparation of large-scale silicon-based lithium niobate thin film electro-optic modulator arrays.

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