Gate drive thyristor circuit and electrostatic protection circuit

Abstract

The invention provides a gate driving thyristor circuit and an electrostatic protection circuit. The gate driving thyristor circuit comprises a semiconductor substrate, and an N pit and a P pit which are adjacent and positioned in the semiconductor substrate, a first N+-type injection region positioned in the N pit, a second N+-type injection region positioned in the P pit, a P-channel metal oxide semiconductor (PMOS) transistor positioned on the N pit, an anode, a cathode and a gate driving circuit; the PMOS transistor comprises a control gate on the surface of the N pit, and a P+-type source region and a P+-type drain region which are positioned in the N pit on the two sides of the control gate; the drain region extends into the P pit, and is connected with the P pit and isolated from the second N+-type injection region; the source region is isolated from the first N+-type injection region; the anode is electrically connected with the first N+-type injection region and the source region respectively; the cathode is electrically connected with the P pit and the second N+-type injection region respectively; and the gate driving circuit comprises diodes which are positively connected between the N pit and the control gate and between the control gate and the cathode respectively. The gate driving thyristor circuit is capable of continuously reducing the trigger voltage of the thyristor.

Description

technical field [0001] The invention relates to the design field of integrated circuit electrostatic protection circuits, in particular to a gate driving thyristor circuit and an electrostatic protection circuit. Background technique [0002] Nowadays, with the improvement of integrated circuit manufacturing process, the feature size of CMOS integrated circuits is getting smaller and smaller. However, subsequently, the protection ability of integrated circuits against electrostatic discharge (ESD, Electrostatic Discharge) is getting weaker and weaker, that is, as the size of devices becomes smaller and smaller, the electrostatic voltage that devices can withstand is also getting smaller and smaller. Small. Moreover, since the static electricity in the working environment of the integrated circuit will not change due to the reduction of the size of the integrated circuit, compared with the large-scale integrated circuit, the integrated circuit manufactured by the deep submic...

AI Technical Summary

Problems solved by technology

Solve the problem that the existing gate drive thyristor circuit using RC coupling loop cannot meet the demand of long pulse width ESD electrostatic pulse discharge

Images