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A heat-conducting aluminum nitride insulating metal substrate and its preparation method

A metal substrate and insulating metal technology, which is applied in circuit substrate materials, printed circuit manufacturing, printed circuit components, etc., can solve the problem of high manufacturing cost, limited application scope of thermally conductive metal substrates, and complicated preparation methods of aluminum nitride insulating films, etc. problem, to achieve the effect of long service life, production process and easy operation, high performance reliability

Inactive Publication Date: 2011-12-21
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complex preparation method of aluminum nitride insulating film and high manufacturing cost, the application range of using aluminum nitride as insulating layer to prepare thermally conductive metal substrates is greatly limited.

Method used

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  • A heat-conducting aluminum nitride insulating metal substrate and its preparation method
  • A heat-conducting aluminum nitride insulating metal substrate and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] On both surfaces of a 0.2mm thick aluminum nitride ceramic plate, a buffer layer - molybdenum and titanium alloy 300 ?, and then magnetron sputtering metal silver 800 ? The surface is electroplated with copper 1mm, and the surface of the other metal silver is electroplated with silver-copper alloy 10μm, the conductive layer is thickened, and the thermal conductivity of the test is 136W / m·K. Then stick a film on the surface of the metal gold plating layer, etch to obtain the required circuit; finally perform electroless silver plating of 15 μm to obtain an aluminum nitride insulating metal substrate with high thermal conductivity.

Embodiment 2

[0031] On both surfaces of the 0.3mm thick aluminum nitride ceramic plate, a layer of buffer layer is magnetron sputtered - tungsten and titanium alloy 500 ? The copper surface is electroplated with 0.8mm of nickel-copper alloy, and the other side of the metal copper surface is chemically plated with 10μm of silver to thicken the conductive layer. The measured thermal conductivity is 121W / m·K. Then, stick a film on the surface of the metal silver plating, etch to obtain the required circuit; finally, perform electroless nickel plating / immersion gold 10μm to obtain a high thermal conductivity aluminum nitride insulating metal substrate.

Embodiment 3

[0033] A 500? metal tungsten buffer layer is ion-plated on both surfaces of a 0.2mm thick aluminum nitride ceramic plate, and then a 300? mm, the other side of the metal gold surface is electroplated copper 30μm, the conductive layer is thickened, and the measured thermal conductivity is 167W / m·K. Then stick a film on the surface of the metal copper plating, etch to obtain the required circuit; finally, electroplate tin to 20 μm to obtain an aluminum nitride insulating metal substrate with high thermal conductivity.

[0034] The high thermal conductivity aluminum nitride insulating metal substrates prepared in the three examples were baked at 300°C for 10 minutes, and there was no peeling phenomenon between the multilayer metal layers, and the performance reliability was extremely high.

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Abstract

The invention discloses a heat-conducting aluminum nitride insulating metal substrate and a preparation method thereof. The metal substrate uses an aluminum nitride ceramic plate as a heat-conducting insulating layer, the upper and lower sides of the insulating layer are coated with a buffer layer, and the outer surfaces of the two buffer layers are coated with Putting on the first conductive layer; wherein, the surface of the lower first conductive layer is plated with a metal base layer, the surface of the upper first conductive layer is plated with a second conductive layer, and the second conductive layer is coated with a protective layer. The preparation method uses an aluminum nitride ceramic plate as a thermally conductive insulating layer, and a buffer layer and a first conductive layer are plated by a physical deposition method. One side of the first conductive layer is coated with a metal base layer by electrochemical deposition, and the other side of the conductive layer is coated with an electrochemically high-conductivity layer. The second conductive layer and protective layer. The aluminum nitride insulating metal substrate with high thermal conductivity of the present invention has the advantages of high heat dissipation efficiency, long service life, etc., high reliability, and can meet the packaging requirements of various components.

Description

technical field [0001] The invention relates to a method for preparing a thermally conductive metal printed circuit substrate, in particular to a high thermally conductive metal substrate material prepared through a multi-step process with a high thermally conductive aluminum nitride ceramic plate as a substrate. Background technique [0002] With the development of light, thin, small, high-density and multi-functional electronic products, the assembly density and integration of components on the circuit board are getting higher and higher, the power consumption is increasing, and the heat dissipation performance requirements of the substrate are also increasing. high. If the heat dissipation of the substrate is not good, it will cause the components on the circuit board to overheat and greatly reduce the overall reliability. In this case, it is imminent to study reliable high thermal conductivity metal substrates. [0003] A metal substrate generally consists of a three-l...

Claims

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Application Information

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IPC IPC(8): H05K1/02H05K1/05H05K3/00
Inventor 崔国峰刘少芳
Owner SUN YAT SEN UNIV
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