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All solid-state 579nm yellow Raman laser pumped by laser

A 579nm, Raman laser technology, applied in the laser field, can solve the problems of unstable performance, single output wavelength, poor safety, etc., to avoid insertion loss and high pumping efficiency.

Inactive Publication Date: 2011-11-30
NORTHWEST UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of dye yellow lasers, such as low power, poor safety, toxic dyes and easy degradation, high energy consumption, unstable performance, and complex laser circulation cooling system, restrict its development.
Semiconductor lasers can theoretically generate laser light of any wavelength within the 477nm-600nm band, but for each target wavelength, semiconductor light-emitting materials must be specially designed, which is expensive
In terms of dual-wavelength and frequency lasers, nonlinear crystals are mainly used to generate spectral lines near 590nm for the 1.06μm and 1.31μm spectral lines of neodymium-doped working substances in the resonant cavity, with a single output wavelength and low output power and conversion efficiency. , with limited application

Method used

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Embodiment Construction

[0021] Combine below figure 1 The present invention will be further explained.

[0022] See attached figure 1 As shown, the horizontal optical path of the incident plane 1064nm total reflection mirror (1) is sequentially arranged with BBO crystal electro-optic Q switch (2), Brewster mirror (3), laser gain medium (4), and pulsed LD side pumping Module (5), synchronous delayed pulse signal generator (6), 1064nm output mirror (7), LBO frequency double crystal (8), 45° beam splitter (9), λ / 2 wave plate (10), focusing lens ( 11), 579nm yellow light laser mirror (12), KGW Raman crystal (13), 579nm yellow light laser output mirror (14).

[0023] 1064nm total reflection mirror (1) high reflection to 1064nm fundamental frequency light, R> 99.8%1064nm;

[0024] BBO crystal electro-optical Q switch (2) uses 4×4×12mm 3 The BBO electro-optic crystal is a de-voltage working mode, the λ / 4 wave voltage (1064nm) is 3.4±0.2 KV, and the falling edge f <10ns, the delay is continuously adjustable within...

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PUM

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Abstract

The invention discloses an all solid-state 579nm yellow Raman laser pumped by a laser. A horizontal light path of incident plane 1064nm holophote are successively provided with a BBO electro-optic Q switch, a Brewster lens, a laser gain medium, a pulse LD side pump module, a 1064nm laser output mirror, a LBO frequency doubling crystal, a 45DEG C spectroscope, a Lambda / 2 wave plate, a focusing lens, a 579nm yellow laser reflector, a KGW Raman crystal and a 579nm yellow laser output mirror. In the invention, many key technologies, such as a pulse semiconductor laser (LD) side pump polycrystal Nd: YAG ceramic rod, a BBO electro-optic Q-switched technology, synchronous delay pulse signal trigger, LBO-crystal outer cavity frequency doubling and the like, are adopted. 532nm green laser can be acquire, wherein peak value power generated by the green laser can reach 370 kW and a narrow pulse width is less than 15ns. The wave band laser is used to perform an end pump on the KGW Raman crystal so as to obtain the high peak power consisting of 1 kHz of repetition rate, around 10ns of pulse width, and over 200kW of the peak power and 579nm yellow Raman laser output of the narrow pulse width.

Description

technical field [0001] The invention relates to an all-solid-state 579nm yellow Raman laser with high peak power and narrow pulse width, belonging to the technical field of lasers. Background technique [0002] The 550nm-600nm yellow band laser has irreplaceable application value in medical treatment, demonstration, satellite guidance, underwater detection and other fields. At present, lasers producing this band include copper vapor lasers, dye yellow lasers, semiconductor lasers, and dual-wavelength sum-frequency lasers. Copper vapor laser has a complex structure and low conversion efficiency. In order to obtain copper vapor, an electric heating device must be used to heat the copper to a temperature of 1500°C. It is necessary to use alumina materials that can withstand high temperatures and have good vacuum airtight performance. A heating wire is wound outside to heat the metal inside the tube. The operating temperature of this laser is quite high, and there are serious ...

Claims

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Application Information

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IPC IPC(8): H01S3/0941H01S3/115H01S3/10H01S3/30
Inventor 任兆玉白杨郭家锡张豪磊白晋涛
Owner NORTHWEST UNIV
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