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Method for preparing hollow spindle-shaped micro-structured zinc oxide

A micron-structured, spindle-shaped technology, applied in the field of preparation of micron semiconductor material zinc oxide, can solve problems such as ZnO not seen, and achieve the effects of environmental friendliness, high yield and mild reaction conditions

Inactive Publication Date: 2011-11-23
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are no relevant patents and literature reports on ZnO with a hollow spindle microstructure

Method used

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  • Method for preparing hollow spindle-shaped micro-structured zinc oxide
  • Method for preparing hollow spindle-shaped micro-structured zinc oxide
  • Method for preparing hollow spindle-shaped micro-structured zinc oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Dissolve zinc acetate in deionized water, stir to dissolve completely to obtain a uniform and transparent solution, zinc

[0024] The concentration of ions is 0.01 mol / liter.

[0025] (2) Add 0.1g of sodium borohydride into the solution of (1), and continue stirring for 10 minutes.

[0026] (3) Preheat the solution obtained in step (2) at 40°C for 50 minutes.

[0027] (4) Transfer the solution of (3) into a hydrothermal synthesis reactor and heat at 60°C for 10h.

[0028] (5) After step (4), cool down to room temperature naturally.

[0029] (6) Filter the solution obtained in step (5), collect the product, wash, and dry to obtain a spindle-shaped

[0030] structure of micron ZnO.

Embodiment 2

[0032] (1) Dissolve zinc acetate in deionized water, stir to dissolve completely to obtain a homogeneous transparent solution, the concentration of zinc ions is 0.01 mol / liter.

[0033] (2) Add 0.2g of sodium borohydride into the solution of (1), and continue stirring for 10 minutes.

[0034] (3) Preheat the solution obtained in step (2) at 60°C for 40 minutes.

[0035] (4) Transfer the solution of (3) into a hydrothermal synthesis reactor and heat at 60°C for 20h.

[0036] (5) After step (4), cool down to room temperature naturally.

[0037] (6) Filter the solution obtained in step (5), collect the product, wash, and dry to obtain a spindle-shaped

[0038] structure of micron ZnO.

Embodiment 3

[0040] (1) Dissolve zinc acetate in deionized water, stir to dissolve completely to obtain a homogeneous transparent solution, the concentration of zinc ions is 0.01 mol / liter.

[0041] (2) Add 0.2g of sodium borohydride into the solution of (1), and continue to stir for 1h.

[0042] (3) Preheat the solution obtained in step (2) at 60°C for 30 minutes.

[0043] (4) Transfer the solution of (3) into a hydrothermal synthesis reactor and heat at 120°C for 10h.

[0044] (5) After step (4), cool down to room temperature naturally.

[0045] (6) Filter the solution obtained in step (5), collect the product, wash, and dry to obtain a spindle-shaped

[0046] structure of micron ZnO.

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PUM

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Abstract

The invention relates to a method for preparing hollow spindle-shaped micro-structured zinc oxide, and belongs to a method for preparing a semiconductor micro material. The method comprises the following steps of: dissolving soluble zinc salt in deionized water, and stirring to obtain uniform and transparent solution, wherein the total concentration of zinc ions is 0.01 to 0.50mol / L; adding sodium borohydride into the solution in a ratio, stirring, and preheating; and transferring the solution to a hydrothermal reaction kettle for reaction, naturally cooling to room temperature after the reaction is finished, and collecting, washing, and drying a product. The micro-structured zinc oxide has high dispersibility and crystallinity, a uniform shape and obvious cavities; and the reaction system is simple, and convenient to wash, the reaction is mild, cost is low, yield reaches 99.2 percent, and wide application prospects are achieved.

Description

technical field [0001] The invention relates to a method for preparing a micron semiconductor material zinc oxide with a special shape. Background technique [0002] Zinc oxide is a wide bandgap semiconductor material with high exciton binding energy of 60eV. It can produce strong exciton emission in the ultraviolet region at room temperature. Its unique photoelectric properties and low cost make it suitable for short-wave light-emitting diodes, room temperature ultraviolet lasers Semiconductor materials such as diodes, solar cells, UV absorbers, transparent conductors, field emission displays, piezoresistors and sensors, catalysts and gas sensors are widely used (Wei Dong Zhou , Xiao Wu , Yong Cai Zhang et al. Materials Letters, 2007, 61: 2054–2057). On the other hand, the electrical and optical properties of inorganic materials are greatly affected by the size and shape. Choosing an appropriate synthesis method to control the size and shape of materials according to peopl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y40/00
Inventor 蒋峰芝洪元萍刘拥军袁波
Owner YUNNAN UNIV
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