Method for manufacturing high-density and low-cost zinc oxide aluminum sputtering target

Abstract

The invention discloses a method for producing a high-density and low-cost zinc oxide aluminum sputtering target. The method comprises the following steps of: selecting ZnO powder and Al2O3 powder as main raw materials; fully dissolving methyl acrylamide monomer and N-N' methylenebisacrylamide in pure water to form premixed solution, adding dispersants such as tetramethyl ammonium hydroxide and the like, adding the powder raw materials, stirring, pulping, regulating the pH value, and performing ball milling for over 6 hours to obtain pulp; adding organic degassing agent and ammonium persulfate initiator into the pulp, vacuumizing, stirring, degassing, and pouring the pulp into a die; heating the die to the temperature of between 50 and 70 DEG C, and initiating cross-linking curing reaction of gel monomer; releasing the cured wet blank from the die, and drying the wet blank to obtain a target biscuit; and performing un-sticking, high-temperature sintering and machining on the biscuit in a circulated air furnace to manufacture the zinc oxide aluminum sputtering target with relative density of over 98 percent and uniform chemical composition and microstructure.

Description

technical field [0001] The invention relates to a method for manufacturing a zinc-aluminum oxide sputtering target with high density and low cost. Background technique [0002] The transparent conductive film produced by magnetron sputtering is a necessary functional material for liquid crystal display, flat panel display, electrostatic shielding and solar cells. [0003] The DC magnetron sputtering method is currently the leading preparation process for transparent conductive films used in international high-end display devices. This process uses ITO semiconductor ceramics (90% In 2 o 3 -10%SnO 2 ) as a sputtering source, the ITO transparent conductive film is generally prepared by DC magnetron sputtering method at the substrate temperature of 100-550°C in argon or argon-oxygen mixed atmosphere. %, and the resistivity is less than 10×10 -4 Ω·cm. [0004] However, due to the high cost of ITO materials, the main raw material indium metal is a rare metal, the stock in the...

AI Technical Summary

Problems solved by technology

At present, there are other domestic manufacturers or research institutions doing research and development of zinc aluminum oxide (AZO) materials, but vacuum hot pressing, hot isostatic pressing, and cold isostatic pressing are generally used for subsequent sintering. The cost is high, the amount of follow-up processing is large, the yield is low, and it is difficult to obtain high-density, high-uniformity and oxygen-free products