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Method for manufacturing high-density and low-cost zinc oxide aluminum sputtering target

A zinc-aluminum oxide and manufacturing method technology, applied in the direction of sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problem that it is difficult to obtain high density and high uniformity without loss of oxygen, expensive production cost, and equipment Large investment and other issues, to achieve the effect of density and uniformity of microstructure, high production efficiency and excellent quality

Active Publication Date: 2011-10-12
江苏迪丞光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are other domestic manufacturers or research institutions doing research and development of zinc aluminum oxide (AZO) materials, but vacuum hot pressing, hot isostatic pressing, and cold isostatic pressing are generally used for subsequent sintering. The cost is high, the amount of follow-up processing is large, the yield is low, and it is difficult to obtain high-density, high-uniformity and oxygen-free products

Method used

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Experimental program
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Embodiment Construction

[0033] In this embodiment, 1960 grams of zinc oxide powder and 40 grams of aluminum oxide powder are weighed with an electronic scale. The raw material composition is 98wt% zinc oxide+2wt% aluminum oxide, with an average particle diameter of 20 nanometers to 200 microns, and the powder purity is All greater than 99.95%. Made into mixed raw material powder.

[0034] Fully dissolve pure water, methacrylamide monomer, and N-N'dimethylbisacrylamide in a weight ratio of 100:(16-18):(0.6-1) to form a premix solution, and add 0.1-5 parts by weight Tetramethylammonium hydroxide is used as a dispersant, adding raw material powder, and ball milling to make slurry with a ball mill. The solid phase content of the raw material powder in the slurry is 50%, and the pH value of the slurry is adjusted to 9.5 by adding analytically pure ammonia water. Use zirconia balls as media in a ball mill for 15 hours, then add 0.1-1% volume of n-octanol organic degassing agent, and 0.01-0.5wt‰ ammonium p...

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PUM

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Abstract

The invention discloses a method for producing a high-density and low-cost zinc oxide aluminum sputtering target. The method comprises the following steps of: selecting ZnO powder and Al2O3 powder as main raw materials; fully dissolving methyl acrylamide monomer and N-N' methylenebisacrylamide in pure water to form premixed solution, adding dispersants such as tetramethyl ammonium hydroxide and the like, adding the powder raw materials, stirring, pulping, regulating the pH value, and performing ball milling for over 6 hours to obtain pulp; adding organic degassing agent and ammonium persulfate initiator into the pulp, vacuumizing, stirring, degassing, and pouring the pulp into a die; heating the die to the temperature of between 50 and 70 DEG C, and initiating cross-linking curing reaction of gel monomer; releasing the cured wet blank from the die, and drying the wet blank to obtain a target biscuit; and performing un-sticking, high-temperature sintering and machining on the biscuit in a circulated air furnace to manufacture the zinc oxide aluminum sputtering target with relative density of over 98 percent and uniform chemical composition and microstructure.

Description

technical field [0001] The invention relates to a method for manufacturing a zinc-aluminum oxide sputtering target with high density and low cost. Background technique [0002] The transparent conductive film produced by magnetron sputtering is a necessary functional material for liquid crystal display, flat panel display, electrostatic shielding and solar cells. [0003] The DC magnetron sputtering method is currently the leading preparation process for transparent conductive films used in international high-end display devices. This process uses ITO semiconductor ceramics (90% In 2 o 3 -10%SnO 2 ) as a sputtering source, the ITO transparent conductive film is generally prepared by DC magnetron sputtering method at the substrate temperature of 100-550°C in argon or argon-oxygen mixed atmosphere. %, and the resistivity is less than 10×10 -4 Ω·cm. [0004] However, due to the high cost of ITO materials, the main raw material indium metal is a rare metal, the stock in the...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
Inventor 孔伟华
Owner 江苏迪丞光电材料有限公司
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