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Ultra-low dielectric constant material film and preparation method thereof

A technology of ultra-low dielectric constant and material thin film, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of thermal volatilization of precursors and unsuitability of ring precursors, etc., and achieve good electrical properties and large breakdown electric field Strength, the effect of saving production costs

Inactive Publication Date: 2011-08-17
FUDAN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

Therefore, most ring precursors are not suitable for this process
The present invention proposes a new low-k thin film preparation process, which avoids the condensation reaction of precursor molecules by high temperature treatment, thus solving the problem of thermal volatilization of precursors

Method used

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  • Ultra-low dielectric constant material film and preparation method thereof
  • Ultra-low dielectric constant material film and preparation method thereof
  • Ultra-low dielectric constant material film and preparation method thereof

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Embodiment Construction

[0031] SiOCH material films with different properties can be obtained by using the method for preparing ultra-low dielectric constant material films provided by the present invention. The following description is an example of preparing SiOCH material films using the method proposed by the present invention. Specific steps are as follows:

[0032] 1. Provide a low-resistance monocrystalline silicon substrate and perform standardized cleaning.

[0033] 2. Preparation of precursors for ultra-low dielectric constant material films: 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane (TVTMCTS), the purity of which is as follows It is 99.7wt%, and this precursor monomer has a single ring structure, consisting of eight Si-O bonds and four vinyl groups.

[0034] 3. A layer of precursor thin film is formed on the above-mentioned low-resistance single crystal silicon substrate by spin coating, which is named SiOCH thin film. During the spin coating process, the rotation speed wa...

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Abstract

The invention belongs to the technical field of super-large-scale integrated circuit manufacturing, and in particular relates to an ultra-low dielectric constant material film and a preparation method thereof. The preparation method comprises the following steps of: first, taking a single annular 2,4,6,8-tetravinyl-2, 4, 6, 8-tetravinylcyclotetrasiloxane as a precursor; then, forming a precursor film on a silicon substrate by a spin-coating method; next, irradiating the obtained film by using ultraviolet light; later on, performing polyreaction among precursor monomers to form an ultra-low dielectric constant SiOCH film; and finally, performing thermal annealing treatment on the film to further improve the electrical characteristics of the SiOCH film. In the SiOCH film obtained by adopting the method, the dielectric constant can reach 1.94 and the breakdown electric field intensity is greater than 3 MV / cm; and under the external electric field of 1 MV / cm, the film has the leakage current density magnitude order of 10<-7>A / cm2, the young's modulus of greater than 2 GPa, and the hardness of 0.2 GPa.

Description

technical field [0001] The invention belongs to the technical field of semiconductor VLSI manufacturing, and in particular relates to a low dielectric constant material thin film and a preparation method thereof. Background technique [0002] With the expansion of the scale of semiconductor integrated circuits, the feature size is continuously reduced, and the resistance of the metal lines inside the integrated circuit and the capacitance between the metal lines are increasing, which will lead to serious degradation of interconnection performance, such as RC (R refers to resistance , C refers to capacitance) delay, crosstalk, power consumption, etc. Replacing aluminum with copper as a new generation of metal wires reduces the resistance of integrated circuits by about 40%. The remaining important task to improve the performance of integrated circuits is how to reduce parasitic capacitance as much as possible. Among them, replace SiO with low dielectric constant (low-k) mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/532
Inventor 丁士进孟庆伟杨春晓张卫
Owner FUDAN UNIV
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