Manufacturing method of VC SOI nLDMOS (Vertical Channel Silicon-on-insulator n Lateral Double-diffused Metal Oxide Semiconductor) device unit with p-type buried layer

Abstract

The invention relates to a manufacturing method of a VC SOI nLDMOS (Vertical Channel Silicon-on-insulator n Lateral Double-diffused Metal Oxide Semiconductor) device unit with a p-type buried layer. The SOI nLDMOS device manufactured by the prior art seriously limits vertical voltage resistance and lateral voltage resistance, and has serious self-heating effect and poor high temperature resistance and thermal stability. Through the manufacturing method disclosed by the invention, ten times of photoetching are carried out on an SOI thick film material with the p-type buried layer to manufacture the VC SOI nLDMOS device with the p-type buried layer, and a formed depletion layer bears the vast majority of vertical withstand voltage when the VC SOI nLDMOS device applies a high voltage between a drain electrode and a source electrode in the blocking state, thus the vertical voltage resistance of the VC SOI nLDMOS device is improved, the self-heating effect of the device is remarkably reduced, and the high temperature resistance and the thermal stability are improved; furthermore, the volume and the weight of a system are reduced, the resource is saved, the energy consumption is reduced and the environment is protected.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a device unit of a vertical channel (VC) SOI (semiconductor on insulating layer) nLDMOS (n-type lateral double-implanted metal-oxide-semiconductor field-effect transistor) with a p-type buried layer Integrated fabrication methods for SOI (Semiconductor On Insulator) CMOS (Complementary Metal-Oxide-Semiconductor) VLSI (Very Large Scale Integration) processes. Background technique [0002] Vertical channel (VC) SOI nLDMOS devices are used as Non-contact power electronic switches, power drivers or RF power amplifier transistors have great potential in technical fields such as intelligent power electronics, high-temperature environment power electronics, space power electronics, vehicle power electronics, communications, remote sensing, aerospace, military defense, and the Internet of Things. widely used. SOI CMOS VLSI process technology has advantages such as high process m...

AI Technical Summary

Problems solved by technology

[0013] When a high voltage is applied to the drain of the vertical channel SOI NLDMOS device fabricated by this method, since the substrate under the buried insulating layer hardly participates in the withstand voltage, the withstand voltage performance of the device is seriously affected, and the thick buried oxide layer affects the device. The heat dissipation of the device is low, and the device is easy to generate heat, which is not conducive to improving the reliability of the device and system, saving energy and protecting the environment