Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing single-layer graphene

A single-layer graphene and metal thin film technology, applied in the field of two-dimensional thin film material preparation, can solve problems such as difficult to reuse, not suitable for large-scale preparation and application of industrial production, and expensive single crystal metal substrates. The effect of uniform number distribution, high quality and large area controllable growth

Active Publication Date: 2013-02-06
PEKING UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the existing literature reports, in order to effectively control the number of layers of graphene, people have tried different metal substrates for growth. The low-pressure chemical vapor deposition method on copper foil can prepare single-layer graphene with a uniformity of 95%. However, the preparation conditions are harsh, and the formation of multilayer graphene cannot be completely avoided.
Single crystal metal substrates are also used to control the uniformity of graphene. Single crystals of metals such as nickel and cobalt can grow uniformly distributed graphene. However, single crystal metal substrates are expensive and undergo etching during the transfer of graphene. Afterwards, it is difficult to reuse, and it is not suitable for large-scale preparation and application and industrial production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing single-layer graphene
  • Method for preparing single-layer graphene
  • Method for preparing single-layer graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1, preparation monolayer graphene

[0036] 1) Select a molybdenum foil with a thickness of 200 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0037] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated from room temperature to 900° C. for 25 minutes in a tube furnace, then annealed at a constant temperature for 20 minutes, and then subjected to Heat up to the catalytic growth temperature of 1000° C. in 5 minutes. At this time, feed carbon source methane (flow rate is 50 sccm) and stay for 5 minutes to grow. The volume ratio of methane gas to hydrogen gas is 16:1, and then 15° C. / min The cooling rate is reduced to 700°C, the heater is turned off, and the temp...

Embodiment 2

[0044] Embodiment 2, prepare single-layer graphene (thinning the thickness of metal substrate to 1 / 8 of embodiment 1, increasing the carbon source concentration to 8 times of embodiment 1 during growth, extending the growth time to 6 times of embodiment 1)

[0045] 1) Select a molybdenum foil with a thickness of 25 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0046] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated from room temperature to 900° C. for 25 minutes in a tube furnace, then annealed at a constant temperature for 20 minutes, and then subjected to Heat up to the catalytic growth temperature of 1000° C. in 5 minutes. At this time, feed carbon source methane (flow...

Embodiment 3

[0049] Embodiment 3, prepare single-layer graphene (thinning the thickness of metal substrate to 1 / 8 of embodiment 1, increase the carbon source concentration to 8 times of embodiment 1 during growth, reduce the cooling rate to 1 / 8 of embodiment 1 4)

[0050] 1) Select a molybdenum foil with a thickness of 25 μm as the metal substrate, and use the electron beam evaporation method, in a vacuum of 1×10 -7 mbar, a polycrystalline nickel film with a thickness of 200nm is vapor-deposited on the molybdenum foil metal substrate at a temperature of 25°C to obtain an alloy substrate;

[0051] 2) In hydrogen gas (flow rate of 400 sccm) and argon gas (flow rate of 500 sccm), the alloy substrate obtained in step 1) was heated to 900°C in a tube furnace, then annealed at a constant temperature for 20 minutes, and then heated to a catalytic growth temperature of 1000°C At this time, the carbon source methane (flow rate is 50sccm) is passed through for 5 minutes to grow, the volume ratio of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing single-layer graphene. The method comprises the following steps of: 1) preparing an alloy substrate; and 2) in the hydrogen and inert atmosphere, catalyzing to grow graphene on the surface of the alloy substrate obtained in the step 1) by a chemical vapor deposition method, thereby finishing the preparation of the single-layer graphene. The method makes use of the characteristics of two or more alloy metals in the alloy substrate, realizes control on the decomposition, diffusion and precipitation processes of a carbon source, simply and efficiently restrains the precipitation process of carbon dissolved in the metal substrate to enable the graphene to be capable of growing in a surface catalytic manner to obtain the single-layer graphene with uniform layer distribution, and is suitable for industrial production and particularly for the controllable preparation of single-layer or few-layer graphene.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional thin film materials, and relates to a method for preparing single-layer graphene. Background technique [0002] Graphene is made of carbon atoms according to sp 2 Two-dimensional monoatomic layer materials formed by bonding. Graphene has many excellent properties, such as high electron mobility, long-range ballistic transport properties at room temperature, and adjustable band gap. It is considered to be a strong competitor for building a new generation of electronic device materials. Graphene's good electrical conductivity and light transmission properties make it have a very good application prospect in transparent conductive electrodes, and it is expected to be widely used in touch screens, liquid crystal displays, organic photovoltaic cells, organic light-emitting diodes and other fields. The unique two-dimensional structure of graphene makes it have bright application...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04
Inventor 刘忠范戴博雅付磊
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com