Method and system for forming Cu-In-Ga-S-Se absorption layer and cadmium sulfide buffer layer in antivacuum way

Abstract

The invention discloses a method and system for forming a Cu-In-Ga-S-Se absorption layer and a cadmium sulfide buffer layer in an antivacuum way. The method comprises the steps of: in specific to a substrate with a back electrode layer under antivacuum, forming a coating layer from mixed slurry on the back electrode layer, primarily drying, compacting the coating layer by using a compacting device, carrying out primary S-Se reaction treatment to form a primary Cu-In-Ga-S-Se layer, thermally treating to improve the lattice matching of the primary Cu-In-Ga-S-Se layer, carrying out miscellaneous-phase removal treatment by using potassium cyanide or bromides to remove miscellaneous-phase cuprous selenide and copper sulphide, carrying out post-stage S-Se reaction treatment to generate a needed post-stage Cu-In-Ga-S-Se absorption layer, and finally, forming a cadmium sulfide buffer layer on the Cu-In-Ga-S-Se absorption layer by using a chemical-tank water bath method.

Description

technical field [0001] The invention relates to a method and system for forming a copper indium gallium sulfide selenide absorbing layer and a cadmium sulfide buffer layer, in particular, performing a two-stage sulfur selenide reaction in a non-vacuum environment to form an absorbing layer with good quality. Background technique [0002] Under the international trend of green energy, copper indium gallium selenide (CIGS) solar cells with quaternary compounds in thin film solar cells are not limited by raw materials, can be fabricated on large-area flexible substrates, and have the advantages of high conversion efficiency, especially The conversion efficiency of the unit battery (Cell) can reach 20% and the conversion efficiency of the module can reach 14%. Therefore, it has gradually attracted the attention of the new energy industry in various countries and is committed to its development. [0003] refer to figure 1 , is a schematic diagram of a CIGS solar cell in the prio...

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Problems solved by technology

[0006] The manufacturing method of the above-mentioned copper indium gallium selenium solar cell can adopt vacuum process or non-vacuum process, wherein the vacuum process mainly uses sputtering method or evaporation method, although the product quality is better, but the material utilization rate is low, the equipment is expensive and the manufacturing The cost is high, and the ink process (InkProcess) is used instead of the vacuum process, which can greatly reduce the manufacturing cost and has great development potential. However, the density of the CIGS absorber layer is relatively insufficient, which often makes the quaternary compound of CIGS difficult to form. Larger particles lead to relatively more grain boundaries in the absorbing layer, which cannot successfully convert the light falling on the grain boundaries into usable electrical energy, making it difficult to improve the conversion efficiency

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