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Direct current glow plasma device and preparation method of diamond chip

A plasma and DC glow technology, which is applied in the field of plasma technology and material preparation, can solve the problems of increased collision frequency between electrons and neutral particles and elevated plasma temperature, and achieve the effects of inhibiting discharge transfer and stabilizing high pressure

Inactive Publication Date: 2011-07-20
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the frequency of collisions between electrons and neutral particles increases, resulting in a further increase in plasma temperature

Method used

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  • Direct current glow plasma device and preparation method of diamond chip
  • Direct current glow plasma device and preparation method of diamond chip
  • Direct current glow plasma device and preparation method of diamond chip

Examples

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Effect test

preparation example Construction

[0044] The present invention also provides a kind of preparation method of diamond sheet, comprising:

[0045] Putting the substrate into a growth chamber of a DC glow plasma device, the background pressure of the growth chamber is below 1Pa;

[0046] Introduce H into the growth chamber 2 The mixed gas of , Ar and hydrocarbon is used to excite the plasma by pulse direct current, the pulse frequency is 0.1kHz-4kHz, the cathode temperature is 800°C-1600°C, and the chemical vapor deposition is carried out to obtain the diamond sheet.

[0047] According to the present invention, the duty cycle is preferably 50%-100%, more preferably 70%-95%, and most preferably 80%-90%. The volume ratio of argon to hydrogen is preferably 1-10:100, more preferably 2-9:100, most preferably 3-8:100. The discharge voltage is preferably 500-1200V, more preferably 600-1100V, most preferably 700-1000V; the discharge current is preferably 5-25A, more preferably 7-22A, most preferably 8-20A. The gas pre...

Embodiment 1

[0054] Coat the surface of the silicon wafer with diamond powder;

[0055] The silicon chip coated with diamond powder is placed in such as figure 1 On the anode base in the vacuum chamber of the DC glow plasma device shown, the vacuum chamber is pumped to 0.1Pa with a mechanical pump;

[0056] Fill the vacuum chamber with a mixed gas of hydrogen and argon, the ratio of argon to hydrogen is 1%, discharge is performed under the condition of air pressure to 160 Torr, the discharge duty cycle is 80%, the discharge voltage is 1000V, and the discharge current is 18A, the pulse frequency is 2kHz, and the cathode temperature is 900°C-1100°C. Then feed methane gas accounting for 1% of the total flow rate, keep the pressure in the vacuum chamber constant, and carry out chemical vapor deposition to obtain diamond sheets.

[0057] Such as Figure 5 , Figure 6 Shown is an optical microscope image of the diamond sheet prepared in this embodiment. The diamond sheet prepared in this emb...

Embodiment 2

[0059] Coat the surface of the flat molybdenum disc with diamond powder;

[0060] The molybdenum sheet coated with diamond powder is placed as figure 1 On the anode base in the vacuum chamber of the DC glow plasma device shown, use a mechanical pump to pump the vacuum chamber until the background pressure is lower than 1Pa;

[0061] Fill the vacuum chamber with a mixed gas of hydrogen and argon, the ratio of argon to hydrogen is 4%, discharge under the condition of air pressure to 200 Torr, the duty cycle of discharge is 85%, the discharge voltage is 1000V, discharge The current is 18A, the pulse frequency is 2kHz, and the cathode temperature is 1100°C. Then feed alcohol vapor accounting for 3% of the total flow rate, keep the pressure in the vacuum chamber constant, and carry out chemical vapor deposition to obtain diamond sheets. The diamond sheet prepared in this embodiment has a diameter of 65 mm and a thickness of 1 mm.

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Abstract

The embodiment of the invention discloses a direct current glow plasma device, comprising an electrode system, a water cooling vacuum system and a power supply control system, wherein the power supply control system comprises a pulse direct current power supply. The device provided by the invention can operate under the condition of a high pressure by adopting a discharge pulse, transferring of glow to arc discharge is effectively inhibited, and stable high pressure direct current glow discharge plasmas can be obtained. The invention also provides a method for processing direct current glow plasmas and a preparation method of a diamond chip, and the manner of pulse to the steady-state operation is adopted to generate the high pressure glow plasmas. Pulse operation can effectively inhibit the transferring of the glow to arc discharge, and the plasmas are maintained to be stable; and besides, argon is introduced, thus stable and uniform plasmas can be conveniently obtained. The stable high pressure uniform plasmas contain massive active particles, thus the growth rate of the diamond chip can be greatly improved.

Description

technical field [0001] The invention relates to the technical fields of plasma technology and material preparation, and more specifically relates to a DC glow plasma device and a method for preparing a diamond sheet. Background technique [0002] Plasma chemical vapor deposition technology is widely used in metallurgy, chemical industry and material preparation and other fields. The key to plasma chemical vapor deposition technology is the generation of plasma. There are few active particles in low-pressure DC glow plasma, which leads to low growth rate of materials during material preparation, which seriously limits the application of low-pressure DC plasma in material preparation. High-pressure DC glow plasma has the advantages of high pressure, high particle collision frequency, and high gas temperature. It has high dissociation efficiency of gas molecules and is easy to obtain more active particles. It has unique advantages in plasma chemical vapor deposition technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/503C23C16/513C23C16/27C30B25/00C30B29/04
Inventor 朱晓东丁芳詹如娟倪天灵柯博
Owner UNIV OF SCI & TECH OF CHINA
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