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Method for preparing moth-eye structure for antireflection on surface of solar battery

A technology of solar cells and solar cells, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of poor long-range periodicity and the lack of versatility of semiconductor substrates, and achieves the suppression of interface reflection, low cost, and good anti-reflection effect of effect

Inactive Publication Date: 2011-06-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Self-organized growth technology is cost-effective, but its long-range periodicity is poor, and it is not universal for different semiconductor substrates

Method used

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  • Method for preparing moth-eye structure for antireflection on surface of solar battery
  • Method for preparing moth-eye structure for antireflection on surface of solar battery
  • Method for preparing moth-eye structure for antireflection on surface of solar battery

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preparation example Construction

[0024] see figure 1 , Shown in 2, 3, a kind of preparation method of the moth-eye structure that is used for solar cell surface anti-reflection of the present invention, comprises the following steps:

[0025] Step 1: Take an epitaxial wafer used for a solar cell, and clean the epitaxial wafer, the epitaxial wafer is a monocrystalline Si or GaAs-based solar cell structure;

[0026] The cleaning method of GaAs-based epitaxial wafers is as follows: place the epitaxial wafers in acetone and absolute ethanol respectively, heat them at 55°C for 3-5 minutes, then rinse them with deionized water, dry them with nitrogen, and then put them in the negative film remover Boil in medium for 15 minutes, rinse with deionized water, and then bake in an oven at 120°C for 30 minutes; for Si-based epitaxial wafers, use standard RCA cleaning method to improve the adhesion of photoresist to the substrate.

[0027] Step 2: Spin-coat the photoresist on the epitaxial wafer, and the photoresist used ...

example 1

[0056] Example 1: Rhomboid GaAs moth-eye surface anti-reflection structure

[0057] To prepare anti-reflection structures on the diamond-shaped GaAs moth-eye surface, a pseudo-diamond array photoresist mask is needed. see image 3 The two-dimensional distribution of the exposure dose shown should ideally be diamond-shaped rather than a hole array. However, due to the isotropy of the development process and the spatial fluctuation of the exposure dose during the exposure process, the actual shape obtained is not ideal. Rhombus shape. However, the duty ratio of the pseudo-rhomboid is 1, which is greater than that of the circular array photoresist mask prepared by the usual method with a duty ratio of only 0.5. After dry etching, a diamond-shaped moth-eye structure similar to that shown in Figure 2(a) is obtained, with a duty cycle of 1 and a depth of 450nm. The reflectance spectrum measured under the condition of incident angle of 8 degrees of arbitrary polarized light is as ...

example 2

[0058] Example 2: Conical GaAs moth-eye surface anti-reflection structure

[0059] The conical GaAs moth-eye structure was prepared, and the conical structure as shown in Figure 2(b) was obtained by dry etching using a two-dimensional periodic circular lattice mask. The specific steps are: (1) spin-coat 120nm-thick photoresist on the GaAs substrate; (2) bake in an oven at 90°C for 20 minutes; (3) expose with a double-beam interference exposure system, and rotate the substrate between two exposures 90 degrees, to get a square lattice; (4) control the exposure, so that image 3 The area larger than the contour line 2 shown is fully exposed, resulting in a potential circular hole array; (5) careful control of the development time, revealing a two-dimensional circular dot matrix array; (6) post-baking; (7) ICP dry method etch. The prepared conical GaAs moth-eye structure is similar to that in Figure 2(b), with a depth of about 400nm and a duty ratio between 0.5-0.6. In the case...

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Abstract

The invention discloses a method for preparing a moth-eye structure for antireflection on the surface of a solar battery, which comprises the following steps: 1, cleaning an epitaxial wafer used by the solar batter; 2, spin-coating photoresist on the epitaxial wafer; 3, prebaking the photoresist to form a sample; 4, carrying out double exposure and development on the sample by two-beam interference exposure equipment to form a two-dimension periodic photoresist mask pattern; 5, carrying out after-baking on the developed sample; 6, performing dry etching on the sample; and 7 removing the photoresist mask pattern in order to complete the preparation of the moth-eye structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a method for preparing a moth-eye structure used for anti-reflection on the surface of a solar cell. Background technique [0002] Sunlight enters the semiconductor layer from the air, and the refractive index of air is 1, while semiconductor materials such as GaAs and Si have a refractive index above 3, so a large refractive index step will be formed at the interface, and the resulting Fresnel reflection will lose more than 30% of the sunlight. energy. The current general solution is to use a dielectric film with a wavelength of 1 / 4λ as the anti-reflection layer, but its bandwidth is limited; the multi-layer dielectric anti-reflection layer has a wide-spectrum anti-reflection effect, but is limited by the selection and matching of the refractive index of each layer of material , The thermal expansion coefficient of the film layer boundary is differe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216G03F7/20
CPCY02P70/50
Inventor 陈熙樊中朝李宁宋国锋陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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