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Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof

A multi-layer film and magnetic technology, applied in the field of spintronics, can solve the problems of difficult mass production, mismatch of semiconductor CMOS circuits, and the inability to reduce the critical switching current density, so as to broaden the application range, reduce power consumption, The effect of increasing the degree of integration

Active Publication Date: 2011-06-01
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this solution still has difficulties that cannot be ignored. For example, its critical switching current density cannot be reduced, which has become a bottleneck for the improvement of device integration and the development of device miniaturization.
Moreover, the device preparation process of this solution does not match the semiconductor CMOS circuit, and it is difficult to carry out mass production with the same process level standard; at the same time, the uniformity and yield of its process production also face great difficulties

Method used

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  • Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof
  • Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof
  • Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0051] This embodiment provides a magnetic multi-layer film unit based on a vertical film surface electric field. Such as figure 1 As shown, the magnetic multilayer film unit of this embodiment includes a magnetic multilayer film core unit and a magnetic moment control unit.

[0052] Among them, the multilayer film core unit adopts a single barrier structure, including buffer layer 1, pinning layer 2, pinned layer 3, barrier layer 4, free layer 5 and covering layer 6 from bottom to top. The magnetic moment control unit includes two conductive layers 7, 8, the two conductive layers 7, 8 are all parallel to the film surface of the magnetic multilayer film core unit, and the multilayer film core unit is located between the two conductive layers 7, 8, That is, the core unit of the multilayer film is located in the electric field formed by the two conductive layers 7 , 8 . In this embodiment, there is an insulating layer between the conductive layer of the multilayer film core un...

Embodiment 2

[0064] This embodiment provides a magnetic multilayer film unit based on the electric field parallel to the film surface. Such as figure 2 as shown,

[0065] The magnetic multilayer film unit of the present embodiment comprises a magnetic multilayer film core unit and a magnetic moment control unit,

[0066] Among them, the multilayer film core unit adopts a single barrier structure, including buffer layer 1, pinning layer 2, pinned layer 3, barrier layer 4, free layer 5 and covering layer 6 from bottom to top. The magnetic moment control unit includes two conductive layers 9, 10, the two conductive layers 9, 10 are perpendicular to the film surface of the magnetic multilayer film core unit, and the multilayer film core unit is located between the two conductive layers 9, 10, That is, the core unit of the multilayer film is located in the electric field formed by the two conductive layers 9 , 10 . In this embodiment, there is an insulating layer between the conductive laye...

Embodiment 3

[0071] This embodiment provides a magnetic multilayer film unit based on localized parallel film surface electric field.

[0072] according to image 3 As shown, the magnetic multilayer film unit includes a magnetic multilayer film core unit and a magnetic moment control unit. Among them, the multilayer film core unit adopts a single barrier structure, including buffer layer 1, pinning layer 2, pinned layer 3, barrier layer 4, free layer 5 and covering layer 6 from bottom to top. The magnetic moment control unit includes two conductive layers 11, 12, and the free layer of the multilayer film core unit is located between the two conductive layers 11, 12, that is, the free layer of the multilayer film core unit is located between the two conductive layers 11, 12. in the electric field formed. The direction of two conductive layers 11,12 is consistent with embodiment 2, the difference between the conductive layers 11,12 of the present embodiment and the conductive layer of embo...

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Abstract

The invention provides a magnetic multilayer film unit, comprising a magnetic multilayer film core unit and a magnetic moment control unit, wherein the magnetic multilayer film core unit comprises a free layer; the magnetic moment control unit comprises two conducting layers; and the free layer of the magnetic multilayer film core unit is positioned in an electric field formed by the two conducting layers. In addition, the invention also provides a corresponding preparation method and a magnetic moment overturning control method of the magnetic multilayer film unit. In the invention, the power consumption of the devices is greatly reduced, and the integration level of the devices can be improved; a preparation process and a semiconductor process are compatible so as to be beneficial to large-scale industrial production; and the magnetic multilayer film unit is beneficial to miniaturization of spintronic devices and has the advantage of radiation resistance. The magnetic multilayer film unit can be widely applied in the spintronic devices such as logic devices, nonvolatile storages, spinning transistors and various sensors and the like in the field of the future computer information communication industry. The invention is beneficial to widening of the application range of the spintronic devices.

Description

technical field [0001] The invention relates to the technical field of spin electronics, in particular, the invention relates to a magnetic multilayer film unit and its preparation and magnetic moment reversal method. Background technique [0002] Spintronics devices represented by magnetic random access memory (MRAM) have the characteristics of data non-volatility, radiation resistance, high speed, high density, low power consumption, long life, etc., and are the future generation of computer, information and communication technology It is one of the important industrial technologies that promote the sustainable development of high-tech industries and the world economy. [0003] The core of spintronics devices is the manipulation of spin. The macroscopic performance of spin in magnetic materials is magnetic moment, so the core of spintronics devices based on magnetic materials is the manipulation of magnetic moment. The traditional method of controlling magnetic moment re...

Claims

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Application Information

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IPC IPC(8): H01F10/32H01F41/14G11C11/15
CPCG11C11/161
Inventor 温振超于国强王译魏红祥张曙丰韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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