Bidirectional triode thyristor auxiliarily triggered by POMS field effect transistor

Abstract

The invention discloses a bidirectional triode thyristor auxiliarily triggered by a P-channel metal oxide semiconductor (POMS) field effect transistor. The bidirectional triode thyristor comprises a P-type substrate; a deep N trap is formed on the P-type substrate; an N trap, and a first P trap and a second P trap which are positioned on the two sides of the N trap are formed in the deep N trap; a first N+ injection region and a first P+ injection region which are separated by a first shallow ditch are formed on the first P trap; the first P+ injection region is positioned on the inner side and crosses the junction of the first P trap and the N trap; a second N+ injection region and a second P+ injection region which are separated by a second shallow ditch are formed on the second P trap;the second P+ injection region is positioned on the inner side and crosses the junction of the second P trap and the N trap; and laminated gate oxides and polysilicon gates are coated on the surface of the N trap between the first P+ injection region and the second P+ injection region. The silicon controlled thyristor can be auxiliarily triggered by a POMS tube, has a small start voltage, a simple structure, small occupied layout area, high robustness, and high starting speed and can provide a bidirectional current path.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a triac triggered by a PMOS field effect transistor. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature is an important factor affecting the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge phenomena, and with the continuous advancement of chip processing technology, thinner gate oxide layer thickness and smaller device sizes have made integrated circuits subject to The chances of electrostatic discharge damage are greatly increased. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomena are usually divided into four types: HBM (Human Body Model), MM (Machine Discharge Model), CDM (...

AI Technical Summary

Problems solved by technology

However, the SCR trigger voltage is generally high, and it cannot effectively protect chips with an operating voltage of 5V and below.

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