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Preparation method of photoassisted sol-gel of yttrium doped zinc oxide transparent conductive film

A technology of transparent conductive film and zinc oxide is applied in the field of preparation of photoprosol-gel to achieve the effects of being suitable for mass production, low production cost and improving electrical properties

Inactive Publication Date: 2012-03-28
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no report about the combination of UV irradiation and sol-gel method in the literature and patents to prepare doped ZnO transparent conductive films.

Method used

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  • Preparation method of photoassisted sol-gel of yttrium doped zinc oxide transparent conductive film
  • Preparation method of photoassisted sol-gel of yttrium doped zinc oxide transparent conductive film
  • Preparation method of photoassisted sol-gel of yttrium doped zinc oxide transparent conductive film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] See figure 1 .

[0023] (1) Preparation of sol: Weigh 2.2g of zinc acetate in a 50mL Erlenmeyer flask, add 19.4mL of ethylene glycol monomethyl ether and 0.6mL of ethanolamine, stir and heat in a water bath at 70°C for 1 hour, and transfer to the Erlenmeyer flask Add 0.1149g yttrium nitrate (doping amount 3.0%) in, continue to heat and stir for 2 hours, obtain transparent and clear sol, it is standby after being cooled to room temperature;

[0024] (2) Cleaning of the glass substrate: wash the ordinary glass with detergent, 3mol / L H 2 SO 4 Solution, 1mol / L NaOH solution, deionized water, acetone, absolute ethanol ultrasonic cleaning;

[0025] (3) Preparation of thin film: apply the sol obtained in step (1) to the glass substrate cleaned by step (2) by spin coating; then dry the glass substrate coated with sol on a heating plate at 80°C After 10 minutes, place it in a muffle furnace at 450°C for 2 minutes and repeat the above sol coating, drying and annealing ten tim...

Embodiment 2

[0033] (1) Preparation of sol: Weigh 2.2g of zinc acetate in a 50mL Erlenmeyer flask, add 19.4mL of ethylene glycol monomethyl ether and 0.6mL of ethanolamine, stir and heat in a water bath at 70°C for 1 hour, and transfer to the Erlenmeyer flask Add 0.0192g yttrium nitrate (doping amount 0.5%) to , continue heating and stirring for 2 hours to obtain a transparent and clear sol, which is cooled to room temperature for subsequent use;

[0034] (2) Cleaning of the glass substrate: wash the ordinary glass with detergent, 3mol / L H 2 SO 4 Solution, 1mol / L NaOH solution, deionized water, acetone, absolute ethanol ultrasonic cleaning;

[0035] (3) Preparation of thin film: apply the sol obtained in step (1) to the glass substrate cleaned by step (2) by spin coating; then dry the glass substrate coated with sol on a heating plate at 80°C After 10 minutes, place it in a muffle furnace at 450°C for 2 minutes and repeat the above sol coating, drying and annealing ten times to obtain a ...

Embodiment 3

[0043] (1) Preparation of sol: Weigh 2.2g of zinc acetate in a 50mL Erlenmeyer flask, add 19.4mL of ethylene glycol monomethyl ether and 0.6mL of ethanolamine, stir and heat in a water bath at 70°C for 1 hour, and transfer to the Erlenmeyer flask Add 0.1915g yttrium nitrate (doping amount 5.0%) in, continue heating and stirring for 2 hours, obtain transparent and clear sol, after cooling to room temperature, set aside;

[0044] (2) Cleaning of the glass substrate: wash the ordinary glass with detergent, 3mol / L H 2 SO 4 Solution, 1mol / L NaOH solution, deionized water, acetone, absolute ethanol ultrasonic cleaning;

[0045] (3) Preparation of thin film: apply the sol obtained in step (1) to the glass substrate cleaned by step (2) by spin coating; then dry the glass substrate coated with sol on a heating plate at 80°C After 10 minutes, place it in a muffle furnace at 450°C for 2 minutes and repeat the above sol coating, drying and annealing ten times to obtain a film with a pre...

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Abstract

The invention belongs to the technical field of material surface chemical coating, in particular relating to a preparation method of a photoassisted sol-gel of a yttrium doped zinc oxide transparent conductive film. In the invention, the sol-gel is prepared by adopting a photoassisted sol-gel method and a hierarchic annealing method, and taking zinc acetic acid and yttrium nitric acid as raw materials, ethylene glycol monoemethyl ether as a solvent, and ethanolamine as a stabilizer; and by regulating the doping amount of the yttrium, controlling the temperature and the time of drying and annealing, and irradiating by ultraviolet, the control on the electricity performance of the yttrium doped zinc oxide transparent conductive film is achieved. In the invention, the prepared yttrium doped zinc oxide transparent conductive film has the resistivity within 2.1*10<-2> omega.cm to 8.1*10<-2> omega.cm, the light transmission ratio (including substrate) of a visible light area is more than 85%; in addition, the film consists of zinc oxide nano-crystals with a hexagonal wurtzite structure, wherein the crystal sizes are even, and the crystals are arranged compactly and have C-axis preferable growth orientation.

Description

technical field [0001] The invention belongs to the technical field of material surface chemical coating, and in particular relates to a preparation method of photosol-gel for preparing yttrium-doped zinc oxide transparent conductive film on a glass substrate. Background technique [0002] Doped zinc oxide film has good light transmittance and excellent conductivity in the visible light band, so it also has the function of transparent conductivity; it can be used in transparent electrodes for various electronic displays, and anti-fog windshields for automobiles and aircraft. It not only has electrical and optical properties comparable to ITO conductive glass, but also has the characteristics of abundant raw material reserves, low cost, non-toxicity, and good thermal stability, making it expected to become the best substitute for ITO conductive glass. The dopant that studies more at present is the fourth main group element, as B, Al, Ga, In, Y.Yamamoto etc. are in literature ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
Inventor 李金培张天宝
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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