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Polishing pad with controlled void formation

A polishing pad and pore technology, applied in the fields of chemical mechanical planarization polishing pads and semiconductor devices

Inactive Publication Date: 2013-10-16
INNOPAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adjustment process may be unstable as it may use sharp diamond particles to cut off deformed bumps
Cut-off of deformed bumps is not well controlled, resulting in variations in the size, shape, and distribution of the bumps, which in turn can lead to variations in the uniformity of planarization
In addition, frictional heat from conditioning can also cause non-uniformity in planarization by changing the surface properties of the pad, including properties such as shear modulus, hardness, and compressibility

Method used

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  • Polishing pad with controlled void formation
  • Polishing pad with controlled void formation
  • Polishing pad with controlled void formation

Examples

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Embodiment Construction

[0025] It should be understood that the disclosure of the invention is not limited in its application to the details of construction and the arrangement of elements described in the following description and shown in the drawings. The embodiments herein are capable of other embodiments and of being practiced or carried out in various ways. It is also to be understood that the phraseology and terminology employed herein are for the purpose of description and should not be regarded as limiting. As used herein, "comprising", "comprising" or "having" and variations thereof are meant to encompass the items listed thereafter and their equivalents as well as others. Unless otherwise limited, the terms "connected," "coupled," and "mounted" and variations thereof herein are used broadly and include both direct and indirect connections, couplings, and mountings. Additionally, the terms "connected," "coupled," and variations thereof are not limited to physical or mechanical connections ...

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Abstract

A chemical-mechanical planarization polishing pad is provided comprising a network of elements dispersed within a polymer, a plurality of voids formed in the pad and at least a portion of said network of elements is connected to at least a portion of the voids. A method of forming the pad is also disclosed, which comprises providing a composition, the composition comprising a network of elements and at least one of a polymer or a reactive prepolymer, introducing a gas to the composition and using the gas to produce a plurality of voids in the composition. A method of forming voids is also disclosed, which relies upon the application of a force to the network of elements within the polymer or reactive polymer, followed by removal of the force and void formation.

Description

[0001] Related Application Cross Reference [0002] This application claims priority based on US Provisional Patent Application Serial No. 61 / 041,422, filed April 1, 2008, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a chemical / mechanical polishing pad for polishing materials, such as for semiconductor devices formed from relatively flat or thin semiconductor materials such as silicon. The polishing pad may comprise a fibrous polymer matrix containing pores, wherein the pore geometry, distribution, size, etc. are adjusted to target levels by manufacturing protocols. Background technique [0004] When chemical mechanical planarization (Chemical Mechanical Planarization; CMP) is used as a process step in the manufacture of microelectronic devices such as semiconductor wafers, blanket silicon wafers (blanket silicon wafer) and computer hard disks, the polishing pad can be mixed with abrasive or A non-ab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B5/00B24B29/00
CPCB24B37/24Y10T428/249953Y10T428/249978
Inventor P·利菲瑞D·A·威尔斯M·C·金O·K·许J·E·奥迪伯S·X·乔A·马修吴光伟
Owner INNOPAD
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