Preparation method of rare earth doped Bi2Te3 based thermoelectric film material

Abstract

The invention relates to a rare earth doped Bi2Te3 based thermoelectric film material which is prepared by the steps of: adding rare earth elements during vacuum melting to obtain a Bi2-xTe3REx block thermoelectric material, wherein RE represents the rare earth elements, x is equal to 0.002-0.01, and the doped rare earth elements are light rare earth elements of La and Ce; and grinding the molten material into powder particles of 200-300 mu m to be used as a raw material of a flash evaporation method. The film is prepared by adopting the flash evaporation method, and the deposited film is annealed to obtain the rare earth doped Bi2-xTe3REx thermoelectric film material. The thermoelectric property of the rare earth doped Bi2-xTe3REx thermoelectric film material is superior to an undoped Bi2Te3 based thermoelectric film material, a doping principle is that the rare earth elements have properties similar to alkaline earth, and when the rare earth elements are added, a Bi position is easily replaced to be used as donor doping, which improves carrier concentration, thus the thermoelectric property of the Bi2Te3 based film material is improved.

Description

technical field [0001] The invention relates to a thermoelectric thin film material, in particular to a rare earth-doped Bi 2 Te 3 based thermoelectric thin film materials. Background technique [0002] Bi 2 Te 3 The base material is one of the typical thermoelectric materials for semiconductor refrigeration. It has broad application prospects in microelectronics, optoelectronics and many high-tech fields, and has attracted widespread attention in recent years. Bi 2 Te 3 The thermoelectric properties of base thermoelectric thin film materials are still low for practical applications and need to be further improved. The development of low-dimensional and optimal doping technology has opened up new avenues for the research of high-performance thermoelectric materials. Low-dimensional thermoelectric materials provide the possibility of greatly improving thermoelectric performance through quantum size effects in electron and phonon transport. Doping can adjust the carrier...

AI Technical Summary

Problems solved by technology

The equipment of molecular beam epitaxy technology is expensive and the production cost is high

Although electrochemical atomic layer epitaxy does not require vacuum when depositing thermoelectric thin films, and the cost is low, the influencing factors are quite complicated. The performance of the thin film is not only determined by the deposition current, voltage, temperature, solvent, pH value and concentration of the solution, but also by the solution. Influenced by factors such as ionic strength and electrode surface state, it is very difficult to prepare ideal thin film materials with complex components by electrochemical atomic layer epitaxy; metal organic chemical vapor deposition methods have expensive raw materials and produce toxic gases during use Sources and expensive equipment, etc.

More importantly, none of the above deposition methods can achieve rare earth-doped Bi 2 Te 3 Preparation of base thermoelectric thin film materials