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Method for preparing silicon-based light emitting diode (LED)

A light-emitting diode, silicon-based technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as inability to obtain electroluminescence

Inactive Publication Date: 2013-03-27
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because this material is an insulator, it cannot obtain electroluminescence

Method used

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  • Method for preparing silicon-based light emitting diode (LED)
  • Method for preparing silicon-based light emitting diode (LED)
  • Method for preparing silicon-based light emitting diode (LED)

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preparation example Construction

[0037] In the method for preparing a silicon-based light-emitting diode provided by the present invention, the silicon-based light-emitting diode is composed of a p-i-n structure, wherein the p-type electrode is a boron-doped silicon substrate, the n-type electrode is a phosphorus-doped silicon material, and the middle intrinsic layer Composed of erbium silicate inorganic compound and silicon-rich silicon oxide.

[0038] Such as figure 1 Shown is a flowchart of a method for preparing a silicon-based light-emitting diode according to an embodiment of the present invention, which includes the following steps:

[0039] S1: Preparation of erbium silica sol.

[0040] Specifically, the rare earth erbium salt is put into an alcohol solvent, stirred at a temperature of 60-70° C. for 1-3 hours, and then the obtained solution is naturally cooled to room temperature; a certain stoichiometric ratio of ethyl orthosilicate is added to continue stirring for 1 hour. -3h; then add HNO 3 Or ...

Embodiment 1

[0052] An optical communication device production unit requires to obtain a light-emitting diode with a communication wavelength of 1.53 μm, and adopts the preparation method of the new silicon-based light-emitting diode of the present invention. The steps are as follows:

[0053] S1: Preparation of erbium silica sol.

[0054] Put the rare earth erbium salt into alcohol solvent, stir at 70°C for 1h, wherein the molar ratio of erbium salt to alcohol is 1:20, then cool the obtained solution naturally to room temperature; Ethyl orthosilicate, continue to stir for 1h, wherein, satisfying the molar ratio of erbium salt and ethyl orthosilicate is 1:1; Next add HNO 3 or HCl solution, adjust the pH value to 3, and finally continue stirring at a temperature of 70° C. for 6 h until a transparent erbium silica sol is formed.

[0055] S2: coating the erbium silicate sol on the p-type doped silicon substrate to prepare a thin film of the mixture of erbium silicate inorganic compound and s...

Embodiment 2

[0061] An optical communication device production unit requires to obtain a light-emitting diode with a communication wavelength of 1.53 μm, and adopts the method of the present invention, and the steps are as follows:

[0062] S1: Preparation of erbium silica sol.

[0063] Put the rare earth erbium salt into alcohol solvent, stir at 70°C for 1 hour, wherein the molar ratio of erbium salt to alcohol is 1:20, then naturally cool the obtained solution to room temperature; Ethyl silicate continued to stir for 1h, wherein the molar ratio of erbium salt to ethyl orthosilicate was 1:2; then a certain proportion of HNO was added 3 or HCl solution, adjust the pH value to 3; finally, continue to stir at a temperature of 70° C. for 4 h until a transparent erbium silica sol is formed.

[0064] S2: coating the erbium silicate sol on the p-type doped silicon substrate to prepare a thin film of the mixture of erbium silicate inorganic compound and silicon-rich silicon oxide as the intrinsi...

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Abstract

The invention discloses a method for preparing a silicon-based light emitting diode (LED). The method comprises the following steps: S1, preparing erbium silicon oxygen sol; S2, coating the erbium silicon oxygen sol on a p-type doped silicon substrate, and preparing an erbium silicate inorganic compound and silicon-rich silicon oxide mixture film serving as an intrinsic layer; and S3, depositing a layer of phosphorus-doped silicon material on the p-type doped silicon substrate to make an n-type electrode and form the silicon-based LED. By preparing an erbium silicate inorganic compound and silicon-rich silicon oxide mixture film serving as the intrinsic layer of the silicon-based LED, the invention increases the concentration of erbium ions in the erbium silicate inorganic compound by 1 to 2 orders of magnitude, and electroluminescence can be realized through the efficient energy transfer between nano silicon and erbium ions in the silicon-rich silicon oxide so as to realize electroluminescence of the LED at a strong communication wave band of 1.53 mu m.

Description

technical field [0001] The invention belongs to the technical field of light-emitting light sources in optical communication technology, and relates to a method for preparing a silicon-based light-emitting diode. Background technique [0002] At present, silicon-based optoelectronics, which integrates photon technology and microelectronics technology to achieve silicon-based optoelectronic integration, has become a very popular frontier science in the field of optoelectronics in the world. Components in silicon-based optoelectronics include light sources, optical waveguides, optical switches, optical amplifiers, optical modulators, and optical detectors. Among them, silicon-based light source is the most important part of silicon-based optoelectronic components. Since silicon is a semiconductor with an indirect band gap, the luminous efficiency is not high, especially electroluminescence has been a problem that has plagued people for many years. Realizing silicon-based lum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02
Inventor 王兴军王冰郭瑞民王磊周治平
Owner PEKING UNIV
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