Method for reclaiming silicon and silicon carbide from cutting waste materials of monocrystalline silicon and polycrystalline silicon
A cutting waste and polysilicon technology, which is applied in the field of silicon materials, can solve the problems of unsatisfactory high-purity silicon recovery and separation difficulties, and achieve the effects of solving cutting waste pollution, simple and easy process, and improving utilization rate
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Embodiment 1
[0049] The process steps for recovering silicon and silicon carbide from cutting slurry are as follows.
[0050] (1) Slurry pretreatment
[0051] Dry monocrystalline silicon and polysilicon cutting waste at 300°C for 25 minutes, mainly to remove water and polyethylene glycol in the waste; then mix hydrochloric acid with a mass concentration of 13% and the dried cutting powder Mix according to the ratio of liquid to solid volume ratio of 4:1, prepare a suspension system, stir for 12 hours at a temperature of 55°C and normal pressure, and stir at a rate of 1500 rpm to remove iron and Its oxides; the obtained suspension system is washed with water and suction filtered to further remove free iron and other impurity elements to obtain a mixture of silicon and silicon carbide.
[0052] The water washing and suction filtration adopts a commonly used vacuum suction filtration device, and the filtration accuracy is required to reach 0.1 μm. First, suction filter the suspension after t...
Embodiment 2
[0078] The process steps for recovering silicon and silicon carbide from cutting slurry are as follows.
[0079] (1) Slurry pretreatment
[0080] Dry monocrystalline silicon and polycrystalline silicon cutting waste at 320°C for 20 minutes, mainly to remove water and polyethylene glycol in the waste; then mix hydrochloric acid with a mass concentration of 15% and the dried cutting powder Mix according to the ratio of liquid to solid volume of 4:1, prepare a suspension system, stir and process for 8 hours at a temperature of 70°C and normal pressure, and stir at a rate of 3000 rpm to remove iron and iron in the cutting waste. Its oxides; the obtained suspension system is washed with water and suction filtered to further remove free iron and other impurity elements to obtain a mixture of silicon and silicon carbide powder.
[0081] The water washing and suction filtration adopts a commonly used vacuum suction filtration device, and the filtration accuracy is required to reach 0...
Embodiment 3
[0105] The process steps for recovering silicon and silicon carbide from cutting slurry are as follows.
[0106] (1) Slurry pretreatment
[0107] Dry monocrystalline silicon and polycrystalline silicon cutting waste at 280°C for 30 minutes, mainly to remove water and polyethylene glycol in the waste; then mix hydrochloric acid with a mass concentration of 10% and the dried cutting powder Mix according to the ratio of liquid to solid volume of 4:1, prepare a suspension system, stir and process for 15 hours at a temperature of 40°C and normal pressure, and stir at a rate of 300 rpm to remove iron and iron in the cutting waste. Its oxides; the obtained suspension system is washed with water and suction filtered to further remove free iron and other impurity elements to obtain a mixture of silicon and silicon carbide.
[0108] The water washing and suction filtration adopts a commonly used vacuum suction filtration device, and the filtration accuracy is required to reach 0.1 μm. ...
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