Self-lubricating antifriction composite thin film based on MoS2-TiC-C and preparation method thereof
A technology of mos2-tic-c and composite thin film is applied in the field of materials in the field of nano-processing technology to achieve the effects of enhancing bonding strength, inhibiting oxidation, and expanding the scope of use
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Embodiment 1
[0022] Polish the stainless steel substrate to a smoothness of less than 0.01 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into the sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 1Pa, turn on the power, DC sputter Ti or Ni target, the thickness is about 100nm, the sputtering power is 100W, the working pressure is 1Pa, the sputtering time is about 15min, then turn off the power. Introduce a certain amount of mixed gas of argon and methane, adjust the gas flow meter so that the air pressure in the sputtering chamber is 0.8Pa, and the content of methane is 15%, turn on the power, and use radio frequency sputtering MoS 2 Target, power 150W, DC sputtering titanium target, power 10W, working pressure 0.8Pa, sputtering time 60 minutes, turn off the power, after the temperature of the vacuum chamber drops to room temperature, open the vacuum chamber to make a film thickness of about 0.6μm fil...
Embodiment 2
[0024] Polish the stainless steel substrate to a smoothness of less than 0.01 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into the sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 1Pa, turn on the power, DC sputter Ti or Ni target, the thickness is about 100nm, the sputtering power is 100W, the working pressure is 1Pa, the sputtering time is about 15min, then turn off the power. Introduce a certain amount of mixed gas of argon and methane, adjust the gas flowmeter so that the air pressure in the sputtering chamber is 1.2Pa, and the content of methane is 15%, turn on the power, and use radio frequency sputtering MoS 2 Target, power 200W, DC sputtering Ti target, power 15W, working pressure 1.2Pa, sputtering time 90 minutes, turn off the power, after the temperature of the vacuum chamber drops to room temperature, open the vacuum chamber to make a film with a thickness of about 1.3μm fil...
Embodiment 3
[0026] Polish the stainless steel substrate to a smoothness of less than 0.01 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into the sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 1Pa, turn on the power, DC sputter Ti or Ni target, the thickness is about 100nm, the sputtering power is 100W, the working pressure is 1Pa, the sputtering time is about 15min, then turn off the power. Introduce a certain amount of mixed gas of argon and methane, adjust the gas flowmeter so that the air pressure in the sputtering chamber is 0.5Pa, and the content of methane is 15%, turn on the power, and use radio frequency sputtering MoS 2 Target, power 100W, DC sputtering Ti target, power 30W, working pressure 0.5Pa, sputtering time 100 minutes, turn off the power, after the temperature of the vacuum chamber drops to room temperature, open the vacuum chamber to make a film with a thickness of about 1.0μm fi...
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