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Surface cleaning method after sapphire substrate material polishing

A sapphire substrate and rear surface technology, applied in cleaning methods and appliances, cleaning methods using liquids, chemical instruments and methods, etc., can solve problems such as high surface tension, contamination of metal ions, and high wafer surface energy, and reduce Effects of damage layer, improvement of perfection, improvement of uniformity

Inactive Publication Date: 2010-12-15
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the problems of high wafer surface energy, high surface tension, uneven distribution of residual polishing liquid, contamination of metal ions and the like after polishing of known sapphire substrate materials, and discloses a simple and pollution-free sapphire substrate material. Surface cleaning method after polishing

Method used

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  • Surface cleaning method after sapphire substrate material polishing
  • Surface cleaning method after sapphire substrate material polishing
  • Surface cleaning method after sapphire substrate material polishing

Examples

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Effect test

Embodiment 1

[0029] Embodiment 1: prepare 4000g sapphire substrate water-soluble surface cleaning solution

[0030] Get 3645g of deionized water, put into 100g of FA / O surfactant while stirring, 50g of FA / O chelating agent, then weigh 5g of hexamethylenetetramine and pour into above-mentioned liquid while stirring after diluting with 200g of deionized water. After stirring evenly, 4000g of sapphire water-soluble surface cleaning solution was obtained. After water polishing at a flow rate of 1000g / min, the surface was smooth and non-etching, and the roughness was 0.15nm.

Embodiment 2

[0031] Embodiment 2: preparation 4000g sapphire substrate water-soluble surface cleaning solution

[0032] Get 3400g of deionized water, put into polyoxyethylene secondary alkyl alcohol ether surfactant 100g while stirring, FA / O chelating agent 50g, then weigh 250g of phenylacryltriazole, dilute with 200g of deionized water and pour in while stirring the above liquid. After stirring evenly, 4000g of sapphire water-soluble surface cleaning solution was obtained. After water-polishing at a flow rate of 4000g / min, the surface was smooth and non-etching, and the roughness was 0.1nm.

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Abstract

The invention relates to a surface cleaning technology after chemically mechanical polishing (CMP) in the surface high-precision machining process of sapphire substrate materials, and provides a water polishing solution prepared from neutral media. The water polishing solution comprises activator, chelator and corrosion inhibitor. By carrying out water polishing with the water polishing solution at a high output immediately after alkaline polishing is finished, the residual CMP polishing solution can be flushed away, easily-cleaned materials can be adsorbed, the surface tension can be quickly reduced, the reaction can be prevented from continuing (physical adsorption state) to form a unimolecule passive film, and metal ions are enabled to form a soluble chelate, thereby obtaining a clean and perfect polished surface. The water polishing solution has the advantages of low cost, no environmental pollution and no corrosion to equipment.

Description

technical field [0001] The invention belongs to the cleaning technology of the wafer surface after CMP, in particular to the technology of controlling the surface cleaning of the sapphire substrate material after alkaline polishing. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substra...

Claims

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Application Information

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IPC IPC(8): B08B3/10B08B3/08
Inventor 刘玉岭牛新环刘金玉
Owner HEBEI UNIV OF TECH
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