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Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas

An oxygen plasma, lead magnesium niobate technology, applied in crystal growth, chemical instruments and methods, single crystal growth and other directions, can solve the problems of decreased grain density, reduced film-forming ion energy, loose grain boundary structure, etc. To achieve the effect of dense structure, optimized growth conditions and excellent performance

Active Publication Date: 2010-11-24
中国科学院上海硅酸盐研究所苏州研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for most vacuum sputtering deposition methods, such as pulsed laser deposition methods and radio frequency magnetron sputtering methods, high oxygen pressure conditions are likely to cause collisions between film-forming ions and oxygen molecules in the atmosphere before reaching the substrate during the deposition process, reducing the cost. At the same time, the increase of oxygen partial pressure reduces the mean free path of film-forming particles adsorbed on the substrate, reduces the probability of atomic diffusion between grains, and makes the contact between grains dense. The properties of the lead magnesium niobate film are deteriorated, and the grain boundary structure is loose.

Method used

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  • Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas
  • Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas
  • Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas

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Embodiment 1

[0018] In this example, the titanium lead magnesium niobate thin film is prepared by plasma oxygen plasma assisted pulsed laser deposition method, and the specific process steps are as follows:

[0019] a) Target preparation: choose 0.67Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.33PbTiO 3 Ceramics are used as the target material, and the target material is polished to a flat surface, then ultrasonically cleaned in a mixed solution of ethanol and deionized water, dried and placed in a vacuum chamber.

[0020] b) Substrate preparation: ultrasonic cleaning of epitaxial Ir / SrTiO with a mixed solution of ethanol and deionized water 3 / Si(100) substrate, rinse the surface with deionized water, then dry it with nitrogen and place it in a vacuum chamber. Vacuum to higher than 3×10 -4 Pa, heating the substrate to a temperature of 650°C.

[0021] c) Preparation of titanium niobate lead magnesium oxide film: Fill high-purity oxygen into the vacuum chamber, adjust the oxygen partial pressure to 2Pa, ...

Embodiment 2

[0025] In this example, the titanium lead magnesium niobate thin film is prepared by plasma oxygen plasma assisted pulsed laser deposition method, and the specific process steps are as follows:

[0026] a) Target preparation: choose 0.85Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.15PbTiO 3 The thin film uses a single crystal as the target material, and puts it into a vacuum chamber after cleaning and drying.

[0027] b) Substrate preparation: Ultrasonic cleaning with a mixed solution of ethanol and deionized water 0.5 Sr 0.5 CoO 3 The MgO single crystal substrate of the oxide thin film electrode was rinsed with deionized water, then dried with nitrogen and placed in a vacuum chamber. Vacuum until the background vacuum is 3×10 -4 Pa, heating the substrate to a temperature of 600°C.

[0028]c) Preparation of titanium niobate lead magnesium oxide thin film: Fill high-purity oxygen into the vacuum chamber, adjust the oxygen partial pressure to 5Pa, apply high pressure through the gas ionizat...

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Abstract

The invention provides a method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas, which is characterized by introducing high-activity oxygen plasmas to the process of preparing lead titanium-magnesium niobate films by pulsed laser deposition and improving the crystallinity and topography of the oxygen plasmas, thus obtaining the high-quality lead titanium-magnesium niobate films. The specific process is as follows: placing the lead-titanate-lead-magnesium niobate target and the substrate into a vacuum chamber; vacuumizing the vacuum chamber and heating the substrate to certain temperature; then pumping certain amount of high-purity oxygen and ionizing the oxygen by using a gas ionization system to apply high pressure to form the high-activity oxygen plasmas; ensuring the oxygen plasmas between the lead-titanate-lead-magnesium niobate target and the substrate; and using the high energy pulse laser to bombard the lead-titanate-lead-magnesium niobate target to generate the high energy plasmas and depositing the lead-titanate-lead-magnesium niobate films on the substrate. The films prepared by the invention have good crystallization quality, compact structure and excellent dielectric and ferroelectric properties.

Description

technical field [0001] The invention relates to a method for preparing titanium lead magnesium niobate film by using oxygen plasma and pulse laser deposition technology, which belongs to the technical field of electronic materials. Background technique [0002] Due to its excellent dielectric, ferroelectric, piezoelectric, electro-optic and pyroelectric properties, titanium lead magnesium niobate thin film is widely used in film capacitors, non-volatile ferroelectric memories, actuators, sensors, electro-optical devices and detectors, etc. The field has huge application prospects [Park et al., Journal of Applied Physics.82, 1804 (1997) and Zhao et al., Materials Science and Engineering B-Solid State Materials for Advanced Technology.96, 254 (2002)]. [0003] Titanium lead magnesium niobate thin films are prone to lack of oxygen during the preparation process to form impurity phases and generate oxygen vacancies and other related defects, resulting in excessive leakage curren...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B29/32C30B29/30C30B23/00
Inventor 李效民何邕高相东冷雪
Owner 中国科学院上海硅酸盐研究所苏州研究院
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