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Preparation and application of ZnO thin film with flexible substrate suede structure

A flexible substrate and suede technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of high growth temperature, small crystal grains, and difficulty in forming light scattering, so as to facilitate light scattering and material Inexpensive and convenient for large-scale production and promotion

Inactive Publication Date: 2010-11-24
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface of the ZnO film obtained by magnetron sputtering technology is flat and the crystal grains are small (30nm-100nm), so it is difficult to form a good light scattering effect; in addition, the growth temperature of ZnO-TCO with good photoelectric properties is usually higher (> 200℃)

Method used

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  • Preparation and application of ZnO thin film with flexible substrate suede structure
  • Preparation and application of ZnO thin film with flexible substrate suede structure
  • Preparation and application of ZnO thin film with flexible substrate suede structure

Examples

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Effect test

Embodiment 1

[0024] 1. Using the above figure 1 The MOCVD system in, with the help of high-purity DEZn (purity: 99.995%) and water as source material, B 2 h 6 As a doping gas, a textured ZnO film was grown on a PET flexible substrate, the substrate temperature was 145°C, the coating reaction pressure was 130Pa, and the thickness of the film obtained by the test was 1200nm.

[0025] 2. Apply the textured structure PET / ZnO film to the pin type a-Si thin film solar cell. Such as image 3 As shown, the PET / ZnO film is plated, and then p, i, n three layers of a-Si film are grown, and finally the Al metal layer is plated. The photoelectric conversion efficiency of 6.3% is obtained through the current-voltage characteristic test.

Embodiment 2

[0027] 1. Using the above figure 1 The MOCVD system in, with the help of high-purity DEZn (purity: 99.995%) and water as source material, B 2 h 6 As a doping gas, a textured ZnO film was grown on a PET flexible substrate, the substrate temperature was 145°C, the coating reaction pressure was 260Pa, and the thickness of the film obtained by testing was 1500nm.

[0028] 2. Apply the textured structure PET / ZnO film to the pin type a-Si / a-Si laminated thin film solar cell. Such as Figure 4 As shown, the PET / ZnO film is plated, and then p, i, n and p, i, n six layers of a-Si film are grown, and finally the Al metal layer is plated.

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Abstract

The invention relates to a ZnO thin film with a flexible substrate suede structure. The ZnO thin film is prepared by using metal organic chemical vapor deposition technology. Polyethylene terephthalate (PET) is used as a flexible substrate, zinc diethyl and water are used as source materials, borane is used as doped gas, and growth B is doped with ZnO transparent conductive thin films, wherein the structure is PET / MOCVD-ZnO. The thin film is applied to pin type a-Si thin film solar cells and a-Si / a-Si laminated film solar cells, and the structures are PET / ZnO / pina-Si / Al and PET / ZnO / pin a-Si / pin a-Si / Al respectively. The ZnO thin film has the advantages that: the flexible substrate PET material has low cost and high transmissivity characteristics, and contributes to large-area production and popularization; the thin film can grow at a low temperature by MOCVD technology, the suede structure of the obtained ZnO thin film can directly form, and light scattering is facilitated; and the thin film is applied to the thin film solar cells and has high photoelectric conversion efficiency.

Description

【Technical field】 [0001] The invention belongs to the field of transparent conductive oxide thin films of solar cells, in particular to a ZnO thin film with suede structure on a flexible substrate and its application. 【Background technique】 [0002] Transparent conductive oxide (Transparent conductive oxides-TCO) film refers to the average transmittance (T≥80%) of visible light (λ=380~780nm), low resistivity (ρ≤10 -3 Ωcm) oxide film. The widely studied and applied TCO films are mainly F-doped SnO 2 : F thin film, Sn-doped In 2 o 3 :Sn(ITO) thin film and Al-doped ZnO:Al thin film. In the field of solar cell applications, due to ITO and SnO 2 The thin film is easily reduced and blackened in the hydrogen plasma environment, which leads to the deterioration of its optical properties, which becomes an obstacle in the application. In recent years, ZnO thin film has low cost, non-toxicity, easy photolithographic processing and good chemical stability in H plasma environment, ...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/455H01L31/0336
Inventor 陈新亮耿新华林泉倪牮张德坤张建军赵颖
Owner NANKAI UNIV
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