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Application of metallic indium nanometer particle ink

A nano-particle and metal indium technology is applied in the field of solar energy applications, which can solve the problems of good dispersion and difficulty, and achieve the effects of dense and smooth surface, suitable particle size distribution and easy dispersion.

Inactive Publication Date: 2012-11-21
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because indium particles are soft and easy to flatten, it is difficult to obtain nano-indium particles with suitable particle size distribution and good dispersion by physical methods.

Method used

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  • Application of metallic indium nanometer particle ink
  • Application of metallic indium nanometer particle ink
  • Application of metallic indium nanometer particle ink

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1. Configure metal indium nanoparticle ink:

[0035] (1) 1mmol InCl 3 Dissolve in 40ml of ethylene glycol at 140°C, stir magnetically for 30min under the protection of argon, and keep the temperature at 140°C. Add 1ml of triethanolamine to the solution as a stabilizer, and continue stirring for 30 minutes;

[0036] (2) Add 0.2g NaBH 4 Dissolve in 8ml tetraethylene glycol, and stir at room temperature for 15 minutes to obtain a clear solution.

[0037] (3) The alcoholic solution of sodium borohydride obtained in (2) is quickly injected into the indium chloride ethylene glycol solution obtained in (1), and the heating is stopped after reacting for 3 minutes;

[0038] (4) Centrifugally wash the product obtained in (3) with ethanol for 3 to 5 times, and dry to obtain metal indium nanoparticles;

[0039] (5) Prepare solvent according to polyvinylpyrrolidone: ethanol = 1: 300 (mass ratio); prepare ink according to the amount of metal indium nanoparticles: solvent = 1: 30 ...

Embodiment 2

[0047] 1. Configure metal indium nanoparticle ink:

[0048] (1) 1mmol InCl 3 Dissolve in 40ml of ethylene glycol at 140°C and stir magnetically for 30min under the protection of argon. Add 3ml triethanolamine in this solution as stabilizer, continue to stir for 30min;

[0049] (2) Add 0.2g NaBH 4 Dissolve in 8ml tetraethylene glycol, and stir at room temperature for 15 minutes to obtain a clear solution.

[0050] (3) quickly inject the alcoholic solution of sodium borohydride obtained in (2) into the indium glycol solution obtained in (1), and stop the reaction after reacting for 3 minutes;

[0051] (4) Centrifugally wash the product obtained in (3) with ethanol for 3 to 5 times, and dry to obtain metal indium nanoparticles;

[0052] (5) Prepare solvent according to polyvinylpyrrolidone: ethanol = 1: 300 (mass ratio); prepare ink according to the amount of metal indium nanoparticles: solvent = 1: 30 (mass ratio), and ultrasonically disperse for 30 minutes to obtain metal i...

Embodiment 3

[0059] 1. Configure metal indium nanoparticle ink:

[0060] (1) 1mmol InCl 3 Dissolve in 40ml of ethylene glycol at 80°C and stir magnetically for 30min under the protection of argon. Add 1ml of triethanolamine to the solution as a stabilizer, and continue stirring for 30 minutes;

[0061] (2) Add 0.2g NaBH 4 Dissolve in 8ml tetraethylene glycol, and stir at room temperature for 15 minutes to obtain a clear solution.

[0062] (3) quickly inject the alcoholic solution of sodium borohydride obtained in (2) into the indium glycol solution obtained in (1), and stop the reaction after reacting for 3 minutes;

[0063] (4) Centrifugally wash the product obtained in (3) with ethanol for 3 to 5 times, and dry to obtain metal indium nanoparticles;

[0064] (5) Prepare solvent according to polyvinylpyrrolidone: ethanol = 1: 300 (mass ratio); prepare ink according to the amount of metal indium nanoparticles: solvent = 1: 30 (mass ratio), and ultrasonically disperse for 30 minutes to o...

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Abstract

The invention discloses a preparation method for preparing metallic indium nanometer particle ink, which comprises the following steps: (1) dissolving indium chloride in polyalcohol, and adding stabilizing agents; (2) dissolving sodium-containing reducing agents in a polyalcohol solution to be prepared to a reducing agent solution; (3) fast injecting the reducing agent solution obtained in the second step into the solution prepared in the first step for reaction when the reducing agent solution is still hot, and obtaining metallic indium nanometer particles through centrifugation, washing and drying; and (4) dissolving the metallic indium nanometer particles in a special solvent for preparing the nanometer particle ink. The invention also discloses an application method of the metallic indium nanometer particle ink to the preparation of copper-indium sulfide films. The invention has the advantages of simple reaction, easy implementation of the reaction reaction, low cost, high yield and the like, and prepared films have compact and smooth surfaces, crystal grains have large dimension, and the films do not have obvious impure phases.

Description

technical field [0001] The invention relates to the field of solar energy applications, in particular to a low-cost chemical method for synthesizing metal indium nanoparticles and preparing metal indium particle inks, and an application method for preparing sulfur indium copper thin films by using metal indium nanoparticle inks. Background technique [0002] Due to the advantages of low cost and low toxicity of I-III-IV compound semiconductor thin films (mainly sulfur-indium-copper thin films and selenium-indium-copper thin films), they have attracted widespread attention as a new generation of thin-film battery materials. Existing methods for preparing I-III-IV compound semiconductor thin films mainly include: Spray Pyrolysis, Chemical Vapor Deposition, Molecular Beam Epitaxy, Reactive Sputtering ), vacuum evaporation (single source, dual source, triple source), metal organic chemical vapor deposition (MOCVD), electrodeposition (Elector Deposition), chemical bath method (Ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F9/24B32B15/02B32B15/04
Inventor 杨德仁陈官璧汪雷
Owner ZHEJIANG UNIV
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