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Method for preparing high-yield SiC nanowire

A nanowire, high-yield technology, applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of laser ablation method, such as complex preparation of instruments, difficulty in industrialized production, and influence on product purity, so as to achieve cheap raw materials and low cost of instruments. The effect of low requirements and no catalyst use

Inactive Publication Date: 2010-10-06
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The nanowires produced by the arc discharge method are topped with metal particles, which affects the purity of the product
The laser ablation method is complex to prepare instruments, consumes a lot of energy, and is difficult to realize industrial production

Method used

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  • Method for preparing high-yield SiC nanowire

Examples

Experimental program
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Effect test

Embodiment 1

[0018] The method for preparing high-yield SiC nanowires in this embodiment is achieved through the following steps:

[0019] 1. 70% by mass percentage of industrial silicon powder (6000 mesh, Si content > 99.3%) and 30% by mass percentage of industrial flake-like expandable graphite are mechanically mixed;

[0020] 2. Put the raw material mixture into a graphite crucible, place it in a high-temperature atmosphere furnace, and evacuate to 10 4 Pa to exclude oxygen;

[0021] 3. Argon is filled as a protective gas, so that the pressure in the furnace is 2×10 4 Pa;

[0022] 4. Raise the temperature to 1500°C at a rate of 8°C / min, hold for 5 hours, and keep the pressure in the furnace lower than 0.15MPa during the entire preparation process;

[0023] 5. Naturally cool to room temperature, and start the furnace to obtain SiC nanowires.

[0024] The SiC nanowire yield was 65%.

[0025] figure 1 It is a scanning electron micrograph of the product of Example 1.

Embodiment 2

[0027] The present embodiment is different from Example 1 in that in step 1, 36.8% industrial silicon powder (40 mesh, Si content > 99.3%) and 63.2% industrial flake-like expandable graphite are mechanically mixed in step 1; The temperature was raised to 1550°C at a rate of 8°C / min. Other steps are identical with embodiment 1. The SiC nanowire yield was 50%.

[0028] figure 2 It is the scanning electron micrograph of the product of embodiment 2.

Embodiment 3

[0030] The present embodiment is different from Example 1 in that in step 1, the mass percent is 62.5% industrial silica powder (200 orders, SiO 2 Content>99.5%) and mass percentage are 37.5% industrial flake-like expandable graphite to carry out mechanical mixing; In step 2, vacuumize to 10Pa to get rid of oxygen; In step 3, fill argon as protective gas, make the pressure in the furnace be 10 2 Pa; in step 4, the temperature was raised to 1700° C. at a rate of 15° C. / min, and kept for 1 hour, and the pressure in the furnace was kept below 0.25 MPa throughout the preparation process. Other steps are identical with embodiment 1. The SiC nanowire yield was 52%.

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Abstract

The invention discloses a method for preparing a high-yield SiC nanowire. The method comprises the followings steps of: performing mechanical mixing by taking 36.8 to 95.2 mass percent of industrial silicon powder or silicon dioxide powder and 4.8 to 63.2 mass percent of industrial expandable graphite as raw materials; filling a mixture into a graphite crucible and placing the graphite crucible into a high-temperature atmosphere furnace; filling argon as a protective gas after vacuumizing; raising a temperature to be between 1,300 and 1,700 DEG C at a speed of 2 to 15 DEG C / min; keeping the temperature for 1 to 8 hours; keeping the pressure intensity in the furnace lower than 1.0 MPa in an overall preparation process; naturally cooling to room temperature; and opening the furnace to obtain the SiC nanowire. The method has the characteristics of low-cost and easily-obtained raw materials, simple process without using a catalyst and productivity up to 65 percent, and is suitable for industrial production of the SiC nanowire.

Description

technical field [0001] The invention relates to a method for preparing SiC nanowires, in particular to a method for preparing high-yield SiC nanowires. Background technique [0002] Since the discovery of carbon nanotubes by Japan's NEC Corporation in 1991, one-dimensional nanomaterials have developed rapidly, and various nanomaterials such as nanowires, nanorods, nanobelts and nanocables have emerged one after another. One-dimensional nanomaterials have attractive prospects in the study of mesoscopic physics and nanodevices, and can be used as needle tips for scanning tunneling microscopes, nanodevices, optical fibers, and composite material reinforcements. SiC is a new type of wide bandgap semiconductor material developed following the first-generation semiconductor materials represented by silicon-based semiconductors and the second-generation semiconductor materials represented by gallium arsenide and indium phosphide. It can be used for high temperature, high pressure, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82B3/00
Inventor 陈建军石强辛利鹏朱小燕刘仁娟
Owner ZHEJIANG SCI-TECH UNIV
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