Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Single-tube single-capacitor type (1T1C) ferroelectric random access memory (FeRAM)

A ferroelectric memory and ferroelectric storage technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as power consumption, timing complexity, increased design difficulty, complex reference signal circuit, and inconsistent fatigue

Inactive Publication Date: 2010-08-25
TSINGHUA UNIV
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The 1T1C FeRAM that shares the ferroelectric reference unit in each row can solve the problem of inconsistent fatigue, but requires a current-type sense amplifier. As a result, the reference signal generation circuit is more complicated, and the power consumption, timing complexity and design difficulty are greatly increased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single-tube single-capacitor type (1T1C) ferroelectric random access memory (FeRAM)
  • Single-tube single-capacitor type (1T1C) ferroelectric random access memory (FeRAM)
  • Single-tube single-capacitor type (1T1C) ferroelectric random access memory (FeRAM)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Such as figure 1 As shown, the ferroelectric memory cells of 1T1C are neatly arranged in rows and columns, each column of the ferroelectric memory array 1 is connected with a self-reading reference inverter, and the sense amplifier is connected to both ends of the reverse circuit. The read-out and write-back operations can be completed by reading from the reference reverse circuit and the sensitive amplifier circuit. figure 1 The dotted line block diagram part shows the schematic diagram of the circuit structure read from the reference inverter inv, which consists of two NMOS transistors and two PMOS transistors, Read_en is the enable signal of the inverter, vdd_inv is the power supply voltage of the inverter, the The value of the voltage is slightly lower than V1, where V1 is the voltage value on the bit line after charge sharing with the parasitic capacitance of the bit line BL when the ferroelectric memory cell stores '1'. The two horizontal lines in the block diagr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention designs a single-tube single-capacitor type (1T1C) ferroelectric random access memory (FeRAM) storing array based on a reading self-reference phase inverter without a reference unit, belonging to the technical field of design and manufacture of integrated circuits. A ferroelectric reference unit in the traditional 1T1C structure FeRAM is removed, and the reading operation is finished by utilizing a self-reference inverting circuit. The FeRAM designed on the basis of the method has favorable fatigue resistant characteristics. In addition, because the ferroelectric reference unit for generating a reference signal is not needed, and a relevant timing sequence control circuit generated by the reference signal can be omitted, the difficulty and the complexity of design are reduced, and the power consumption is lowered.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design and manufacture, in particular to a single-transistor single-capacitance ferroelectric memory storage array based on a self-reading reference inverter that does not need a reference unit. Background technique [0002] Ferroelectric memory is a new type of non-volatile memory device. It uses the spontaneous polarization phenomenon in ferroelectric materials to realize the storage of binary data. The cell structure of one transistor and one capacitor (1T1C) represents the development direction of high-density FeRAM design. [0003] Currently, in the 1T1C structure FeRAM, the design of the reference signal generation circuit is the biggest challenge. Traditional reference signal generation circuits mainly fall into the following two categories: a shared ferroelectric reference unit for each column and a shared ferroelectric reference unit for each row. In the 1T1C FeRAM that shar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22G11C7/06G11C7/22
Inventor 贾泽张弓任天令陈弘毅
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com