Double-heterojunction MOS-HEMT component

Abstract

The invention discloses a double-heterojunction MOS-HEMT (metal oxide semiconductor-high electron mobility transistor) component comprising a GaN nucleating layer 9, a GaN buffer layer 8, an InGaN embedding layer 7 and a GaN channel layer 6 which are sequentially formed on a sapphire substrate 10, an AlN barrier layer 5 and an Al2O3 gate dielectric layer 4, a source electrode 1 and a drain 3 formed on the AlN barrier layer 5, and a gate electrode 2 formed on the Al2O3 gate dielectric layer 4, wherein the double-heterojunction MOS-HEMT component is characterized in that an AlN material having good heat conductivity and larger band gap is used as the barrier layer, thus reducing the self-heating effect and gate leakage current of the component and reducing the threshold voltage of the component working in a depletion mode; by using the AlN material having strong polarizability, the invention can increase the electron concentration in the channel and increase the output power of the saturation current and the component; by using the Al2O3 material deposited on the basis of the atomic layer deposition process as the gate dielectric layer, the invention can greatly reduce the gate leakage current and increase the breakdown voltage of the component; and by using the reverse polarization of the InGaN material, the invention can increase the conduction band energy of the buffer layer and reduce the current collapse effect of the component.

Description

technical field [0001] The present invention relates to semiconductor component technology, specifically refers to an Al 2 o 3 / AlN / GaN / InGaN / GaN double heterojunction MOS-HEMT devices. Background technique [0002] The third-generation wide-bandgap semiconductor device represented by gallium nitride (GaN) is a new type of wide-bandgap semiconductor device developed rapidly in the past ten years after the first and second-generation semiconductor devices. Since the 1990s, with a series of major breakthroughs in the growth process of gallium nitride (GaN)-based semiconductor materials, a new generation of semiconductor materials represented by GaN has gradually attracted people's attention. It has a large band gap, high electron mobility, High thermal conductivity, with the characteristics of high pressure resistance, thermal decomposition resistance, corrosion resistance and radiation resistance, especially suitable for the production of ultra-high frequency, high temperat...

AI Technical Summary

Problems solved by technology

Nevertheless, AlGaN / GaN / InGaN / GaN double heterojunction HEMT devices still have the following disadvantages: 1. The self-heating effect is obvious; 2. The current collapse effect is obvious; 3. The threshold voltage is too large; 4. The gate leakage current is serious

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