Multi-ion-beam sputter-deposition technology for doping with diamond-like carbon (DLC) coating
An ion beam sputtering and diamond technology, applied in the field of multi-ion beam sputtering deposition, can solve the problems of increasing the friction coefficient of the DLC coating, increasing the brittleness of the DLC coating, and deteriorating the thermal stability of the DLC coating, etc. The effect of improving overall performance
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Embodiment 1
[0025] First, ultrasonic cleaning technology is used to remove the contamination layer on the surface of the workpiece; then, the surface of the workpiece is bombarded and cleaned by the argon ion beam generated by the Kaufman ion source to obtain an atomically clean surface. Then use ion beam assisted sputtering deposition technology to prepare Ti / TiN / TiCN / TiC gradient transition layer; the sputtering ion source adopts Kaufman ion source, the ion energy is 2000eV, the beam current is 100mA, and the sputtering target is titanium; The deposition ion source adopts the Kaufmann ion source, and argon, argon / nitrogen mixed gas, argon / nitrogen / methane mixed gas, argon / methane mixed gas are introduced into the auxiliary deposition ion source successively, and the ion energy is 100- 300eV, the beam current is 100mA. Finally, a Ti and Si co-doped DLC coating was prepared by multi-ion beam sputtering + low-energy ion beam-assisted deposition; a Kaufman ion source was used to sputter a g...
Embodiment 2
[0027] First, ultrasonic cleaning technology is used to remove the contamination layer on the surface of the workpiece; then, the surface of the workpiece is bombarded and cleaned by the argon ion beam generated by the Kaufman ion source to obtain an atomically clean surface. Then use ion beam assisted sputtering deposition technology to prepare Cr / CrN / CrCN / CrC gradient transition layer; the sputtering ion source adopts Kaufman ion source, the ion energy is 2000eV, the beam current is 100mA, and the sputtering target is chromium; The deposition ion source adopts the Kaufmann ion source, and argon, argon / nitrogen mixed gas, argon / nitrogen / methane mixed gas, argon / methane mixed gas are introduced into the auxiliary deposition ion source successively, and the ion energy is 100- 300eV, the beam current is 100mA. Finally, a Cr and F co-doped DLC coating was prepared by multi-ion beam sputtering + low-energy ion beam-assisted deposition; a Kaufman ion source was used to sputter a gr...
Embodiment 3
[0029] First, ultrasonic cleaning technology is used to remove the contamination layer on the surface of the workpiece; then, the surface of the workpiece is bombarded and cleaned by the argon ion beam generated by the Kaufman ion source to obtain an atomically clean surface. Then use ion beam assisted sputtering deposition technology to prepare Cr / CrN / CrCN / CrC gradient transition layer; the sputtering ion source adopts Kaufman ion source, the ion energy is 2000eV, the beam current is 100mA, and the sputtering target is chromium; The deposition ion source adopts the Kaufmann ion source, and argon, argon / nitrogen mixed gas, argon / nitrogen / methane mixed gas, argon / methane mixed gas are introduced into the auxiliary deposition ion source successively, and the ion energy is 100- 300eV, the beam current is 100mA. Finally, WS was prepared by multiple ion beam sputtering + low energy ion beam assisted deposition method 2 , Si co-doped DLC film; use a Kaufmann ion source to sputter g...
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