Tunneling field-effect transistor and manufacturing method thereof

Abstract

The invention belongs to the technical field of the semiconductor device, and particularly relates to a tunneling field-effect transistor and a manufacturing method thereof. The transistor comprises a source electrode, a drain electrode, a grid electrode and a substrate. The channel of the semiconductor device is indented towards the inside of the substrate, so as to reduce the leakage current and simultaneously drive the current to rise. The invention also discloses a manufacturing method of the semiconductor device. The semiconductor device manufactured by the invention has the advantages of low leakage current, high driving current, high degree of automation and the like. The invention can reduce the static power consumption of the integrated circuit and improve the integrated level thereof.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a low power consumption tunneling field effect transistor using a recessed channel and a manufacturing method of the device. Background technique [0002] Metal-oxide-silicon field-effect transistors (MOSFETs) are widely used in various electronic products. With the development of integrated circuit technology, the size of MOSFET is getting smaller and smaller, and the density of transistors on the unit array is getting higher and higher. The ensuing short channel effect is also more obvious. How to reduce the power consumption of portable devices has become a research hotspot in the field of semiconductor technology. Today's integrated circuit device technology node is already at about 50nm, and the leakage current between the source and drain of MOSFETs increases rapidly as the channel length shrinks. Especially when the channel length drops below 3...

AI Technical Summary

Problems solved by technology

However, while the leakage current is reduced, the driving current of the tunneling field effect transistor is also reduced. Therefore, the tunneling field effect transistor is still facing the challenge of how to increase the driving current.

[0004] Although the leakage current of the tunneling field effect transistor is lower than that of the traditional MOS tube, the leakage current of the tunneling transistor also increases with the shortening of the channel.

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