Photoresist detergent composition

Abstract

The invention discloses a photoresist detergent composition, which comprises quaternary ammonium hydroxides, water, alkyl glycol ether with 3 to 18 alkyl glycol carbon atoms, dimethyl sulfoxide, and at least one corrosion inhibitor selecting from citric acid, tricaprylyl citrate and citrate. The photoresist detergent composition can also comprise a polar organic cosolvent, a surface active agent and / or other corrosion inhibitors. The photoresist detergent composition can remove the photoresist (particularly thick film negative photoresist) with the thickness of over 20 mu m on the metals, metal alloys or dielectric medium substrates, and other etching residues; and meanwhile, the composition has low causticity to the metals such as aluminum, copper and the like and the nonmetallic materials such as silicon dioxide and the like, thus, the composition has good application prospect in the micro-electronics fields such as semiconductor chip cleaning, and the like.

Description

technical field [0001] The invention relates to a cleaning agent composition in a semiconductor manufacturing process, in particular to a photoresist cleaning agent composition. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist coating is first formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and then exposed and developed using an appropriate mask. According to the photoresist used To remove the exposed or unexposed part of the photoresist, form a photoresist pattern at the required position, and then perform plasma etching or reactive gas etching on the photoresist pattern to perform pattern transfer. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photore...

AI Technical Summary

Problems solved by technology

[0016] The technical problem to be solved by the present invention is to provide a photoresist cleaning agent for the defects that the existing photoresist cleaning agent has insufficient cleaning ability for thick film photoresist, is highly corrosive to semiconductor wafer patterns and substrates, and is harmful to the environment. Photoresist cleaning agent composition with strong resist cleaning ability, low corrosion to semiconductor wafer patterns and substrates, and environmental protection

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