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Micro-electromechanical structure and manufacturing method thereof

A technology of micro-electromechanical structure and manufacturing method, which is applied in the direction of micro-structure technology, micro-structure devices, and manufacturing micro-structure devices, etc., can solve the problems of insufficient structural strength and the use of microphone backboards, and achieve fewer post-processing steps. The effect of high process precision

Inactive Publication Date: 2010-06-16
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, currently, the materials formed by complementary MOS technology are all made of thin film technology, which leads to the fact that simply using a single layer of complementary MOS material is not enough to provide sufficient structural strength for the use of the microphone backplane

Method used

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  • Micro-electromechanical structure and manufacturing method thereof
  • Micro-electromechanical structure and manufacturing method thereof
  • Micro-electromechanical structure and manufacturing method thereof

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Embodiment Construction

[0027] The embodiment of the present invention provides a microelectromechanical structure to increase the strength of the structure in the thickness direction, and provides a manufacturing method of the microelectromechanical structure, which can simply produce a high aspect ratio structure.

[0028] figure 1 It is a schematic cross-sectional view of a microelectromechanical structure according to an embodiment of the present invention.

[0029] Please refer to figure 1 The microelectromechanical structure 10 of this embodiment includes a substrate 100 and a suspended microstructure 110 on the substrate 100. in figure 1 Only one suspended microstructure 110 is shown in, but the invention is not limited to this. The aforementioned suspended microstructure 110 includes a metal layer 102, a dielectric layer 104, and an edge metal wall 106. The dielectric layer 104 is sandwiched between the metal layers 102, and the edge metal wall 106 is parallel to the thickness direction of the su...

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Abstract

The invention discloses a micro-electromechanical structure and a manufacturing method thereof. In the invention, the micro-electromechanical structure comprises a substrate and at least one suspending microstructure which is positioned on the substrate. The suspending microstructure comprises multiple metal players, at least one dielectric layer and at last one edge metal wall, wherein the dielectric layer is clamped between the metal layers and the edge metal wall is parallel to the thickness direction of the suspending microstructure and surrounds the edge of the dielectric layer. The edge metal wall can resist etching liquid erosion of the dielectric layer in the process and the structure that the metal layers are compounded with the dielectric layer can increase the structural strength of the suspending microstructure in the thickness direction.

Description

Technical field [0001] The present invention relates to a MEMS structure and a manufacturing method thereof, and in particular to a MEMS structure with high structural strength and a manufacturing method thereof. Background technique [0002] Nowadays, integrated circuit technology is booming. The use of mature complementary MOS (complementary MOS) technology to fabricate micro-electro-mechanical structures has become a cost-effective way. The direct integration of circuits and micro-electro-mechanical structures on a single chip reduces the pad area. , The advantages of reducing noise and improving sensitivity. [0003] For example, the structure of a condenser microphone (microphone) is composed of a back plate full of sound holes and a sensing film. When the pressure wave of sound acts on the microphone, the sensing film will move relative to the back plate, causing the back plate to move. The capacitance value between the board and the sensing film changes. Since the sound pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00
Inventor 陈振颐王钦宏
Owner IND TECH RES INST
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