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Method for preparing combined thin film

A combined thin-film and combined laser technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as complex operation and difficult process precision control

Inactive Publication Date: 2014-01-01
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, the present invention aims to solve the problems existing in the above-mentioned prior art, and the preparation method provided by the present invention can overcome the shortcomings of complex operation and difficult process precision control

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  • Method for preparing combined thin film
  • Method for preparing combined thin film

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Embodiment Construction

[0012] The binary combination thin film is prepared by combined laser molecular beam epitaxy, wherein the binary combination thin film includes two components, A and B.

[0013] Such as figure 1 As shown in , where A and B are precursor targets of two different components, and the two targets are bombarded by laser in turn to sputter out the corresponding precursor components. figure 1 The situation shown in is that precursor target A is being sputtered, and a plasma containing A component is formed on the surface of precursor target B.

[0014] Such as figure 2 As shown in , it shows the relative position of the mask plate and the substrate and the preparation process in the process of preparing the combined thin film. figure 2 The mask plate shown in is circular, but the present invention is not limited to the above-mentioned shape, there are two square first windows a and second window b arranged in different positions on the mask plate, the above-mentioned first and se...

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Abstract

The invention provides a method for preparing a combined thin film by using a combined laser molecular-beam epitaxy technology. The method includes the steps that a substrate is provided; precursor target materials of a plurality of different components corresponding to all components in the combined thin film are provided; laser bombardment is sequentially conducted on the precursor target materials of the different components, so that a corresponding precursor component is sputtered; a mask plate with mask patterns is provided; the corresponding sputtered precursor component is deposited on the substrate through the mask plate, and thus the combined thin film can be obtained. By means of the method for preparing the combined thin film, mechanical arm movement and continuous constant-speed axial movement are replaced by axial rotation, component uncontinuity caused by the stopping-restarting process of a mask can be avoided, meanwhile, programming is of no need for controlling the rotation of the mask, and therefore the operation complexity of the technology is lowered. In addition, preparation of multi-component thin films can be achieved by the way that the shape and the position of a window in the mask plate are adjusted.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a combined thin film by using combined laser molecular beam epitaxy technology. Background technique [0002] Composite thin films are thin films composed of different components. Through the selection of precursor materials, thin films with various functions can be obtained, such as superconducting, ferroelectric, dielectric and other materials with rich phase transitions. Because of its rich material phase diagram and broad application prospects, it has become the focus of attention in the industry. In the prior art, combined laser molecular beam epitaxy technology is often used to prepare combined thin films. Combined laser molecular beam epitaxy technology uses targets made of different materials, and excimer laser bombards the targets of corresponding materials to sputter out corresponding precursor components, thereby Precursor components a...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/203
CPCH10N70/026
Inventor 金魁袁洁许波
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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