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Carbon doped boron-nitrogen nanotube/semiconductor oxide composite and preparation method and application thereof

A composite material and nanotube technology, which is applied to carbon-doped boron nitride nanotubes/semiconductor oxide composite materials and their preparation and application fields, can solve the problems of low sensitivity and slow response speed, and achieves fast response speed and application method. Simple, highly gas-sensitive and responsive effects

Inactive Publication Date: 2010-06-02
HEILONGJIANG UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the existing sensitive materials for detecting nitrogen oxides have low sensitivity and slow response speed at room temperature, and the carbon-doped boron-nitrogen nanotube / semiconductor oxide composite material is not used as a sensitive material for detecting nitrogen oxides in the air. Reported issues of gases, while providing carbon-doped boron-nitrogen nanotube / semiconductor oxide composite materials and their preparation methods and applications

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  • Carbon doped boron-nitrogen nanotube/semiconductor oxide composite and preparation method and application thereof
  • Carbon doped boron-nitrogen nanotube/semiconductor oxide composite and preparation method and application thereof
  • Carbon doped boron-nitrogen nanotube/semiconductor oxide composite and preparation method and application thereof

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specific Embodiment approach 1

[0015] Embodiment 1: The carbon-doped boron-nitrogen nanotube / semiconductor oxide composite material in this embodiment is made of carbon-doped boron-nitrogen nanotube, transition metal salt and precipitant; wherein carbon-doped boron-nitrogen nanotube and transition The mass ratio of the metal salt is 1: 2 to 45; the molar ratio of the transition metal salt to the precipitating agent is 1: 1 to 5; 3-6.5 parts of boron-containing materials and 4-25 parts of carbon nanotubes are sintered in an ammonia atmosphere to prepare boron carbon nitrogen nanotubes, and then the boron carbon nitrogen nanotubes are purified and calcined.

[0016] The carbon-doped boron-nitrogen nanotube / semiconductor oxide composite material in this embodiment has a uniform tubular structure, and the surface is evenly compounded with semiconductor oxides with a particle diameter of about 10-15 nm. The nanoscale semiconductor oxide particles have a higher gas density. Sensitivity and responsiveness. The se...

specific Embodiment approach 2

[0017] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the catalyst is α-Fe 2 o 3 or γ-Fe 2 o 3 . Others are the same as in the first embodiment.

specific Embodiment approach 3

[0018] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the boron-containing material is amorphous boron powder, crystalline boron powder or boric acid. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a carbon doped boron-nitrogen nanotube / semiconductor oxide composite and a preparation method and application thereof, relating to a nano material / oxide composite and a preparation method and application thereof. The invention solves the problem that the current sensitive materials used for detecting oxynitride gases have low sensitivity at room temperature and slow response speed. The composite of the invention is prepared by carbon doped boron-nitrogen nanotubes, transition metal salts and a precipitant. The preparation method is characterized in that a catalyst, boron-containing materials and carbon nanotubes are synthesized in the ammonia after being ground, then the carbon doped boron-nitrogen nanotubes are obtained through purification and calcination, and finally the carbon doped boron-nitrogen nanotubes are dispersed in metal salt solution, modified by the precipitant and sintered to obtain the composite. The composite is used for detecting the oxynitride gases as a sensitive material, the lowest molarity of the gases which can be detected is 970ppb and the sensitivity of the material is not less than 2.37%. The time from start of change of resistance of the sensitive films during filling the oxynitride gases to complete stability of resistance is not more than 20s, thus the sensitive films have fast response speed and good reversibility of adsorption.

Description

technical field [0001] The invention relates to nanometer material / oxide composite material and its preparation method and application. Background technique [0002] With the development of industrial production and the increase of motor vehicles, the amount of nitrogen oxide gases, such as NO and NO, discharged into the atmosphere by humans is increasing day by day 2 , which makes the space pollution of people's lives more and more serious. In addition, nitrogen oxides often exist in the airtight compartments of spacecraft, submarines, high-speed railways, and intercity railways in the fields of aerospace and national defense technology. The nitrogen oxide content in these places is monitored in real time. The existing tin dioxide-modified carbon nanotubes are used as sensitive materials for detecting nitric oxide gas. When the working temperature is 300°C, its minimum detection limit is 2ppm, and the sensitivity is 1.93%, which cannot be detected at room temperature; whil...

Claims

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Application Information

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IPC IPC(8): G01N27/04
Inventor 史克英付宏刚张连萍刘艳伟秦臻
Owner HEILONGJIANG UNIV
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